Resonance-free Millimeter-wave Coplanar Waveguide Si Microelectromechanical System Package using a Lightly-doped Silicon Chip Carrier

概要

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A silicon (Si) microelectromechanical system (MEMS) package using a lightly-doped Si chip carrier for coplanar waveguide (CPW) microwave and millimeter-wave integrated circuits (MMICs) is proposed in order to reduce parasitic problems of leakage, coupling, and resonance. The proposed chip carrier scheme is verified by fabricating and measuring a GaAs CPW on two types of carriers (conductor-back metal and lightly-doped Si) in the frequency range 0.5 to 40 GHz. The proposed MEMS package using the lightly-doped (15 $\Omega$$\cdot$cm) Si chip carrier and the high resistivity silicon (HRS, 15 k$\Omega$$\cdot$cm) shows the low loss and resonance-free since the lightly-doped Si chip carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss ($S_{21}$) of 2.0 dB, a reflection loss ($S_{11}$) of 10 dB, and a power loss ($\mathit{PL}$) of 7.5 dB at 40 GHz.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15