Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge(Passive Circuits/Components,<Special Section>Emerging Microwave Techniques)

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This paper presents the design, fabrication and characterization of a low actuation voltage capacitive shunt RF-MEMS switch for microwave and millimeter-wave applications based on a corrugated electrostatic actuated bridge suspended over a concave structure of coplanar waveguide (CPW), with sputtered nickel as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon (HRS) substrate using IC compatible processes for modular integration in a communication devices. The residual stress is very low because having both ends corrugated structure of the bridge in concave structure. The residual stress is calculated about 3-15MPa in corrugated bridge and 30MPa in flat bridge. The corrugated bridge of the concave structure requires lower actuation voltages 20-80V than 50-100V of the flat bridge of the planar structure in 0.3 to 1.0μm thick Ni capacitive shunt RF-MEMS switch, in insertion loss 1.0dB, return loss 12dB, power loss 10dB and isolation 28dB from 0.5 up to 40GHz. The residual stress of the bridge material and structure is critical to lower the actuation voltage.
社団法人電子情報通信学会の論文
2006-12-01