Debris-free Low-stress High-speed Laser-assisted Dicing for Multi-layered MEMS

概要

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We have developed a novel debris-free low-stress high-speed laser-assited dicing technology for multi-layered MEMS wafers, which generally consist of glass and Si. Our technology combines two processes: fabrication of dicing guidelines and wafer separation process. The first process is an internal transformation using a pulsed 1μm laser. The second process is non-contact separation by thermally-induced crack propagation using a CO2 laser or mechanical separation by bending stress. We tested several pulsed lasers with different pulsewidths, including a Nd:YVO4 laser and an Yb fiber laser for generating the internal transformation in Si and/or glass. The internal transformed lines worked well as a guide of the separation. We found that internal transformation only in the Si layer was enough for dicing the glass/Si double-layered wafers. Also the thermal stress induced by the CO2 laser was quite effective in propagating the crack inside the glass layer without internal transformation. The double-layered wafer consisting of glass and silicon can be diced with low stress by our technology.
社団法人電気学会の論文
2010-04-01