Extreme Ultraviolet Emission from Laser-Irradiated Low-Density Xe Targets

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概要

• 論文の詳細を見る

• The effect of the initial density of xenon (Xe) targets on extreme ultraviolet (EUV) emission has been investigated. With decreasing initial density, it was found that the spectral width around 11 nm becomes broad, and the intensity of 13.5 nm emission increases. The maximum conversion efficiency (CE) for solid Xe targets is approximately 0.6% at a $2\times 10^{11}$ W/cm2 of laser intensity, whereas that for the low-density targets is approximately 0.7% at a $4\times 10^{11}$ W/cm2. The spectral broadening with decreasing initial density can be attributed to the change in optical thickness of laser-produced plasmas. The enhancement of CE is attributed to optically thick plasma formation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-07-15

著者

• IZAWA Yasukazu

  Institute for Laser Technology

• Mima Kunioki

  Institue Of Laser Engineering Osaka University

• Aota Tatsuya

  Institute Of Laser Engineering Osaka University

• Nagata Mizuho

  Institute Of Laser Engineering Osaka University

• Miyanaga Noriaki

  Institute Laser Engineering Osaka University

• Fujioka Shinsuke

  Institute Of Laser Engineering Osaka University

• NAKAI Mitsuo

  Institute of Laser Engineering, Osaka University

• Nagai Keiji

  Institute Of Laser Engineering (ile) Osaka University

• Yasuda Yuzuri

  Institute Of Laser Engineering Osaka University

• Ando Tsuyoshi

  Institute Of Laser Engineering Osaka University

• Ueda Nobuyoshi

  Institute Of Laser Engineering Osaka University

• Inubushi Yuichi

  Institute Of Laser Engineering Osaka University

• Nishimura Hiroaki

  Institute Of Laser Engineering Osaka University

• Nishihara Katsunobu

  Institue Of Laser Engineering Osaka University

• Sunahara Atsushi

  Institute For Laser Technology Osaka University

• Norimatsu Takayoshi

  Institute Of Laser Engineering (ile) Osaka University

• Nagai Keiji

  Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan

• Nagata Mizuho

  Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan

• Nagata Mizuho

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

• Fujioka Shinsuke

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

• Nakai Mitsuo

  Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan

• Nakai Mitsuo

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

• Inubushi Yuichi

  Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan

• Aota Tatsuya

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

• Sunahara Atsushi

  Institute for Laser Technology, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan

• Nishimura Hiroaki

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

• Ueda Nobuyoshi

  Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan

• Ueda Nobuyoshi

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan

• NAKAI Mitsuo

  Institute of Laser Engineering (ILE), Osaka University, 2-6 Yamada-oka, Osaka 565-0871 Japan

• SUNAHARA Atsushi

  Institute for Laser Technology

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