Ablation and Amorphization of Crystalline Si by Femtosecond and Picosecond Laser Irradiation
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概要
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The ablation and amorphization of crystalline Si by femtosecond and picosecond laser irradiations are reported in this paper. Laser pulse width was varied in the range of 100 fs–200 ps. We obtained the dependences of ablation rate and fluence for amorphization on laser pulse width. At a lower fluence than a single-shot ablation threshold, femtosecond laser irradiation induced the amorphization of crystalline Si. We confirmed the thickness of an amorphous Si layer by transmission electron microscopy. The thickness of an amorphized layer, which was about 50 nm and almost uniform, did not depend on the number of irradiated laser pulses and fluence. The fluence range for amorphization decreased with increasing laser pulse width.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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IZAWA Yasukazu
Institute for Laser Technology
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Hashida Masaki
Advanced Research Center For Beam Science Icr Kyoto University
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SETUHARA Yuichi
Joining and Welding Research Institute, Osaka University
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Izawa Yusaku
Institute Of Laser Engineering Osaka University
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Fujita Masayuki
Institiute for Laser Technology, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
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Setuhara Yuichi
Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Izawa Yusaku
Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan
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Izawa Yasukazu
Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871, Japan
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