Novolak Resist Removal by Laser Irradiation (532 nm) and Adhesion between Resist and Substrate
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概要
- 論文の詳細を見る
A diazonaphthoquinone/novolak resist on a 42-alloy substrate was irradiated by the second harmonic wave (532 nm) of a pulsed Nd3+YAG laser. The resist was removed, despite the existence of hexamethyldisilane (HMDS). There was no apparent damage to the substrate. In contrast, the resist on a Si wafer could not perfectly be removed. In some cases, there was damage to the substrate. The peeling strength of the resist with HMDS was about three times than that without HMDS. The width of the resist removed by laser irradiation without HMDS was 1.02–1.03 times larger than that with HMDS. The use of this process will benefit the environment, since expensive and toxic chemicals are not used.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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HORIBE Hideo
Department of Materials Science and Engineering, Kochi National College of Technology
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NISHIYAMA Itsuo
Daipura-Wintes Co.
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Yoshikado Akira
Toyo Precision Parts Mfg Co. Ltd.
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Fujita Masayuki
Institute for Laser Technology, Suita, Osaka 565-0871, Japan
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Fujita Masayuki
Institiute for Laser Technology, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yoshikado Akira
Toyo Precision Parts MFG Co., Ltd., Kashihara, Nara 634-0836, Japan
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Horibe Hideo
Department of Materials Science and Engineering, Kochi National College of Technology, Nankoku, Kochi 783-8508, Japan
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Horibe Hideo
Department of Applied Chemistry, Kanazawa Institute of Technology, Hakusan, Ishikawa 924-0838, Japan
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Nishiyama Itsuo
Daipura$\cdot$Wintes Co., Sanda, Hyogo 669-1321, Japan
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