Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface
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概要
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We investigated an environmentally friendly method using atomic hydrogen generated by contact catalysis on a tungsten hot-wire catalyzer to remove photoresist instead of using chemicals and its effects on a Si-wafer surface. We eventually obtained a photoresist removal rate of 2.5 μm/min attributable to a reaction of atomic hydrogen with a positive-tone novolak photoresist, without thermal shrinkage of the photoresist film during atomic hydrogen irradiation because the photoresist shrank only under the influence of substrate heating by the catalyzer. The effects of atomic hydrogen irradiation on the substrate surfaces cannot be confirmed.
- 2009-02-25
著者
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KUSANO Eiji
Department of Internal Medicine, Division of Nephrology, Jichi Medical University
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HORIBE Hideo
Department of Materials Science and Engineering, Kochi National College of Technology
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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KASE Masataka
Fujitsu Ltd.
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Umemoto Hironobu
Faculty Of Engineering Shizuoka University
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Yamamoto Masashi
Department Of Applied Chemistry Tokyo University Of Science
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Umemoto Hironobu
Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Naka, Hamamatsu 432-8561, Japan
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Takao Kazuhisa
Tokyo Ohka Kogyo Co., Ltd., 7-8-16 Ichinomiya, Samukawa, Kanagawa 253-0111, Japan
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Horibe Hideo
Department of Material Design Engineering, Graduate School of Engineering, Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838, Japan
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Horibe Hideo
Department of Applied Chemistry, Kanazawa Institute of Technology, Hakusan, Ishikawa 924-0838, Japan
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Kusano Eiji
Department of Material Design Engineering, Graduate School of Engineering, Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838, Japan
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Kase Masataka
Fujitsu Microelectronics Ltd., 1500 Mizono, Tado, Kuwana, Mie 511-0192, Japan
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