Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
スポンサーリンク
概要
著者
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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Iwamoto T
Research And Analytical Center For Giant Molecules Graduate School Of Science Tohoku University
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Oizumi Hiroaki
Semiconductor Leading Edge Technologies Inc. (selete)
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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Oizumi Hiroaki
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Itani Toshiro
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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古沢 孝弘
Osaka University
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Itani Toshiro
Euvl Infrastructure Dev. Center Inc. Ibaraki Jpn
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
関連論文
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- The Intramolecular Electron Transfer between the Type 1 Cu and the Type 2 Cu in a Mutant of Hyphomicrobium Nitrite Reductase
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Nanowire Formation and Selective Adhesion on Substrates by Single-Ion Track Reaction in Polysilanes
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Photo-Induced Reaction Dynamics in Poly (di-n-hexylsilylene) by Excimer Laser Flash Photolysis
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- The pH-Dependent Changes of Intramolecular Electron Transfer on Copper-Containing Nitrite Reductase
- Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation
- Inclusion Complexation of 4-Biphenylcarboxylate, 4-Biphenylacetate, and 4-Biphenylsulfonate with α-Cyclodextrin, Studied by Pulse Radiolysis
- Determination of Association Constants for Cyclodextrin Inclusion Complexation by Pulse Radiolysis
- Radical Cation of Dodecamethylcyclohexagermane Generated by Pulse Radiolysis
- Radical Anions of Oligogermanes, Me(Me_2Ge)_nMe(n=2, 3, 5, and 10)Generated by Pulse Radiolysis
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film
- Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists for Extreme Ultraviolet Lithography
- Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
- Effects of Dielectric Constant on Acid Generation in Chemically Amplified Resists for Post-Optical Lithography
- Delocalization of Positive and Negative Charge Carriers on Oligo- and Poly-fluorenes Studied by Low-Temperature Matrix Isolation Technique
- Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography : Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- A Novel Three-Dimensional Cyano-Kinked Metal-Complex Host Clathrate [{Cd (imH)}{Cd (CN)_3 (imH)}{Cd(CN)_3}]・C_6H_6 (imH=imidazole) : X-Ray Single Crystal Structure and Solid State ^Cd and ^2H NMR
- Dependence of Acid Yield on Chemically Amplified Electron Beam Resist Thickness
- Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75keV Electron Beam
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- Negative Resist Material Based on Polysilanes for Electron Beam and X-Ray Lithographies
- Thermal Dehydration of a Poly(vinyl alcohol) Film Promoted by Diphenyliodonium Trifluoromethanesulfonate : Absorption Spectra and Elemental Analysis Results
- Promotion of Thermal Dehydration of Poly(vinyl alcohol) Film by Diphenyliodonium Salt
- Activation of SoxR-Dependent Transcription in Pseudomonas aeruginosa
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
- Si-Based Planer Type Ion-channel Biosensors
- Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity
- Radiation Chemistry of Fluoronaphthalene as a Candidate for Absorption Enhancement Component of Chemically Amplified Extreme Ultraviolet Resists
- Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
- Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation
- Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Effects of Flare on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface
- Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
- Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation
- Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons
- Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Radiolysis of CFC-113 Adsorbed on a Molecular Sieve
- Formation of Conjugated Double Bonds in Poly(vinyl alcohol) Film under Irradiation with γ-Rays at Elevated Temperature
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
- Formation of Nanowires Based on $\pi$-Conjugated Polymers by High-Energy Ion Beam Irradiation
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Reductive Dechlorination of α,ω-Dichloroalkanes Adsorbed on Molecular Sieve 13X
- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Radiolytic and Thermal Dehalogenation of CFC-113 Adsorbed on Molecular Sieve 13X
- Scanning Tunneling Microscopy Profiling of Steep Ridges Using Metal-Coated Carbon Nanotube Tip
- Dependence of Acid Yield on Acid Generator in Chemically Amplified Resist for Post-Optical Lithography
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
- Dynamics of Radical Cation of Poly(4-hydroxystyrene) and Its Copolymer for Extreme Ultraviolet and Electron Beam Resists
- Theoretical Study on the Dependence of Acid Distribution on Material Properties of Chemically Amplified Extreme Ultraviolet Resists
- Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography
- Theoretical Study on Relationship between Acid Generation Efficiency and Acid Generator Concentration in Chemically Amplified Extreme Ultraviolet Resists
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
- Relationship between Normalized Image Log Slope and Chemical Gradient in Chemically Amplified Extreme Ultraviolet Resists
- Effects of Ester Groups on Proton Generation and Diffusion in Polymethacrylate Matrices
- Effects of Polymer Interference during Acid Generation on Latent Image Quality of Extreme Ultraviolet Resists
- Polymer Screening Method for Chemically Amplified Electron Beam and X-Ray Resists
- Experimental Studies of Transverse and Longitudinal Beam Dynamics in Photoinjector
- Radiation Chemistry in Chemically Amplified Resists
- Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
- Study of Acid-Base Equilibrium in Chemically Amplified Resist
- Correlation between $C_{37}$ Parameters and Acid Yields in Chemically Amplified Resists upon Exposure to 75 keV Electron Beam
- Difference of Spur Distribution in Chemically Amplified Resists upon Exposure to Electron Beam and Extreme Ultraviolet Radiation
- Full-dimensional Sampling and Analysis of BSSRDF
- Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency
- Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency (Special Issue : Microprocesses and Nanotechnology)
- High-Absorption Resist Process for Extreme Ultraviolet Lithography
- Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
- Full-dimensional Sampling and Analysis of BSSRDF
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists Used for Electron-Beam Lithography