Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
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概要
- 論文の詳細を見る
Very highly sensitive resists are required for extreme ultraviolet (EUV, 13.5 nm) lithography, which is regarded as the most promising next-generation lithography. Chemically amplified resists have been proposed to increase acid yield and sensitivity through the use of an acid amplifier. There are two steps for acid generation in chemically amplified resists: initial acid generation and acid amplification. The first systematic research on the acid generation mechanisms of chemically amplified resists showing the involvement of acid amplifiers has been performed by both time-resolved pulse radiolysis and spectrophotometric titration methods. The role of acid amplifiers in acid generation processes, initiated by exposure, has been clarified using toluene and trifluoromethylbenzene derivatives of pinanediol monosulfonate.
- 2012-04-25
著者
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Arimitsu Koji
Department Of Pure And Applied Chemistry Faculty Of Science And Technology Tokyo University Of Scien
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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Joshi Ravi
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Yamamoto Hiroki
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Arimitsu Koji
Department of Pure and Applied Chemistry, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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Enomoto Kazuyuki
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Oshima Akihiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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Yoshizawa Atsutaro
Department of Pure and Applied Chemistry, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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