Negative Resist Material Based on Polysilanes for Electron Beam and X-Ray Lithographies
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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TAGAWA Seiichi
The Institute of Scientific and Industrial Research, Osaka University
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Seki Shu
The Institute Of Scientific And Industrial Research
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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Maeda Kensaku
The Institute Of Scientific And Industrial Research Osaka University
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Sakurai Yusuke
The Institute Of Scientific And Industrial Research Osaka University
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KUNIMI Yoshihisa
The Institute of Scientific and Industrial Research, Osaka University
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Kunimi Y
The Institute Of Scientific And Industrial Research Osaka University
関連論文
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- The Intramolecular Electron Transfer between the Type 1 Cu and the Type 2 Cu in a Mutant of Hyphomicrobium Nitrite Reductase
- Experimental Studies of Transverse and Longitudinal Beam Dynamics in Photoinjector
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Nanowire Formation and Selective Adhesion on Substrates by Single-Ion Track Reaction in Polysilanes
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Photo-Induced Reaction Dynamics in Poly (di-n-hexylsilylene) by Excimer Laser Flash Photolysis
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- The pH-Dependent Changes of Intramolecular Electron Transfer on Copper-Containing Nitrite Reductase
- Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation
- Inclusion Complexation of 4-Biphenylcarboxylate, 4-Biphenylacetate, and 4-Biphenylsulfonate with α-Cyclodextrin, Studied by Pulse Radiolysis
- Determination of Association Constants for Cyclodextrin Inclusion Complexation by Pulse Radiolysis
- Radical Cation of Dodecamethylcyclohexagermane Generated by Pulse Radiolysis
- Radical Anions of Oligogermanes, Me(Me_2Ge)_nMe(n=2, 3, 5, and 10)Generated by Pulse Radiolysis
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
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- Dependence of Acid Yield on Chemically Amplified Electron Beam Resist Thickness
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- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Polymer Screening Method for Chemically Amplified Electron Beam and X-Ray Resists
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- Promotion of Thermal Dehydration of Poly(vinyl alcohol) Film by Diphenyliodonium Salt
- Activation of SoxR-Dependent Transcription in Pseudomonas aeruginosa
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- Theoretical Study on Difference between Image Quality Formed in Low- and High-Activation-Energy Chemically Amplified Resists
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
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- Optoelectronic Properties and Nanostructure Formation of σ-Conjugated Polymers
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- Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface
- Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
- Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation
- Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons
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- Radiolysis of CFC-113 Adsorbed on a Molecular Sieve
- Formation of Conjugated Double Bonds in Poly(vinyl alcohol) Film under Irradiation with γ-Rays at Elevated Temperature
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
- Formation of Nanowires Based on $\pi$-Conjugated Polymers by High-Energy Ion Beam Irradiation
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
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- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
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- Radiolytic and Thermal Dehalogenation of CFC-113 Adsorbed on Molecular Sieve 13X
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- Dependence of Acid Yield on Acid Generator in Chemically Amplified Resist for Post-Optical Lithography
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
- Dynamics of Radical Cation of Poly(4-hydroxystyrene) and Its Copolymer for Extreme Ultraviolet and Electron Beam Resists
- Theoretical Study on the Dependence of Acid Distribution on Material Properties of Chemically Amplified Extreme Ultraviolet Resists
- Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography
- Theoretical Study on Relationship between Acid Generation Efficiency and Acid Generator Concentration in Chemically Amplified Extreme Ultraviolet Resists
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
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- Effects of Polymer Interference during Acid Generation on Latent Image Quality of Extreme Ultraviolet Resists
- Polymer Screening Method for Chemically Amplified Electron Beam and X-Ray Resists
- Experimental Studies of Transverse and Longitudinal Beam Dynamics in Photoinjector
- Radiation Chemistry in Chemically Amplified Resists
- Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
- Study of Acid-Base Equilibrium in Chemically Amplified Resist