Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation

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Chemically amplified resists have been used in the mass production of semiconductors. Poly(hydroxystyrene)-based resists have been extensively developed for KrF lithography. After KrF lithography, polyacrylate-based resists have been developed for ArF lithography and used in sub-60 nm fabrication. Both types of resist are candidate platforms of extreme ultraviolet (EUV) resists. In this study, the acid generation mechanisms induced by EUV radiation in both types of resist were investigated from the viewpoint of the deprotonation of polymer radical cations using poly(4-hydroxystyrene), poly(methyl methacrylate), and poly(methyl methacrylate-co-4-hydroxystyrene) as model polymers. The dependence of the quantum efficiencies on the molecular structures and acid generator concentration indicated that the deprotonation mechanisms induced by EUV radiation is the same as those induced using an electron beam.
2008-09-25