Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists Used for Electron-Beam Lithography
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概要
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Process simulation is a key technology in electron-beam (EB) lithography, which is used for photomask production. With the increasing complexity of resolution-enhancement technology such as the optical phase shift, the requirement for the fabrication accuracy of EB lithography has become increasingly strict. In chemically amplified resists used for ionizing radiation, acid generators decompose mainly through a reaction with thermalized electrons (${\sim}25$ meV). This sensitization mechanism is different from that of conventional nonchemically amplified resists. In this work, we propose the formulation of a point spread function for the calculation of the acid distribution in chemically amplified resists used for EB lithography.
- Japan Society of Applied Physicsの論文
- 2007-12-25
著者
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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