Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
スポンサーリンク
概要
- 論文の詳細を見る
The small-field exposure tool (SFET) installed at Semiconductor Leading Edge Technologies, Inc. (Selete) is indispensable for the development of resist materials for extreme ultraviolet (EUV) lithography. In the development of next-generation resist materials, the trade-off relationships between resolution, sensitivity, and line edge roughness (LER) are the most serious problems. Among these three features, LER is known to be inversely proportional to the chemical gradient. In this study, we evaluated latent images created using SFET on the basis of EUV sensitization mechanisms. The dependence of the chemical gradient on resolution and sensitivity was clarified for the effective evaluation and development of resist materials. The product of LER and the normalized chemical gradient was roughly estimated to be 0.3–0.6.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-10-25
著者
-
Tagawa Seiichi
The Institute Of Scientific And Industrial Research
-
Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
-
Oizumi Hiroaki
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
-
KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
関連論文
- Preparation of Poly(γ-glutamic acid) Hydrogel / Apatite Composites and Their Application for Scaffold of Cell Proliferation
- Pulse Radiolysis of Hexameric Nitrite Reductase Containing Two Type 1 Cu Sites in a Monomer
- The Intramolecular Electron Transfer between the Type 1 Cu and the Type 2 Cu in a Mutant of Hyphomicrobium Nitrite Reductase
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Nanowire Formation and Selective Adhesion on Substrates by Single-Ion Track Reaction in Polysilanes
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Photo-Induced Reaction Dynamics in Poly (di-n-hexylsilylene) by Excimer Laser Flash Photolysis
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- The pH-Dependent Changes of Intramolecular Electron Transfer on Copper-Containing Nitrite Reductase
- Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation
- Inclusion Complexation of 4-Biphenylcarboxylate, 4-Biphenylacetate, and 4-Biphenylsulfonate with α-Cyclodextrin, Studied by Pulse Radiolysis
- Determination of Association Constants for Cyclodextrin Inclusion Complexation by Pulse Radiolysis
- Radical Cation of Dodecamethylcyclohexagermane Generated by Pulse Radiolysis
- Radical Anions of Oligogermanes, Me(Me_2Ge)_nMe(n=2, 3, 5, and 10)Generated by Pulse Radiolysis
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film
- Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists for Extreme Ultraviolet Lithography
- Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
- Effects of Dielectric Constant on Acid Generation in Chemically Amplified Resists for Post-Optical Lithography
- Delocalization of Positive and Negative Charge Carriers on Oligo- and Poly-fluorenes Studied by Low-Temperature Matrix Isolation Technique
- The Emergence of Alternative Developers for Extreme Ultraviolet Lithography
- Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
- Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
- Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
- Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography : Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Dependence of Acid Yield on Chemically Amplified Electron Beam Resist Thickness
- Resist Thickness Effect on Acid Concentration Generated in Poly(4-hydroxystyrene) Film upon Exposure to 75keV Electron Beam
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Atomic Force Microscopy Study on the Dissolution Processes of Chemically Amplified Resists for KrF Excimer Laser Lithography
- Nonhomogeneous Pattern Formation in the Dissolution Processes of Novolak-Diazonaphthoquinone Resists
- Negative Resist Material Based on Polysilanes for Electron Beam and X-Ray Lithographies
- Thermal Dehydration of a Poly(vinyl alcohol) Film Promoted by Diphenyliodonium Trifluoromethanesulfonate : Absorption Spectra and Elemental Analysis Results
- Promotion of Thermal Dehydration of Poly(vinyl alcohol) Film by Diphenyliodonium Salt
- Activation of SoxR-Dependent Transcription in Pseudomonas aeruginosa
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
- Si-Based Planer Type Ion-channel Biosensors
- Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity
- Radiation Chemistry of Fluoronaphthalene as a Candidate for Absorption Enhancement Component of Chemically Amplified Extreme Ultraviolet Resists
- Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
- Assessment and extendibility of chemically amplified resists for extreme ultraviolet lithography: consideration of nanolithography beyond 22nm half-pitch
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
- Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation
- Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Effects of Flare on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface
- Dynamics of Radical Cation of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Extreme-Ultraviolet and Electron Beam Lithographies
- Difference between Acid Generation Mechanisms in Poly(hydroxystyrene)- and Polyacrylate-Based Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation
- Study of the Reaction of Acid Generators with Epithermal and Thermalized Electrons
- Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Radiolysis of CFC-113 Adsorbed on a Molecular Sieve
- Formation of Conjugated Double Bonds in Poly(vinyl alcohol) Film under Irradiation with γ-Rays at Elevated Temperature
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
- Formation of Nanowires Based on $\pi$-Conjugated Polymers by High-Energy Ion Beam Irradiation
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Reductive Dechlorination of α,ω-Dichloroalkanes Adsorbed on Molecular Sieve 13X
- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Radiolytic and Thermal Dehalogenation of CFC-113 Adsorbed on Molecular Sieve 13X
- Scanning Tunneling Microscopy Profiling of Steep Ridges Using Metal-Coated Carbon Nanotube Tip
- Dependence of Acid Yield on Acid Generator in Chemically Amplified Resist for Post-Optical Lithography
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists
- Dynamics of Radical Cation of Poly(4-hydroxystyrene) and Its Copolymer for Extreme Ultraviolet and Electron Beam Resists
- Theoretical Study on the Dependence of Acid Distribution on Material Properties of Chemically Amplified Extreme Ultraviolet Resists
- Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography
- Theoretical Study on Relationship between Acid Generation Efficiency and Acid Generator Concentration in Chemically Amplified Extreme Ultraviolet Resists
- Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists
- Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
- Acid Generation Mechanism for Extreme Ultraviolet Resists Containing Pinanediol Monosulfonate Acid Amplifiers: A Pulse Radiolysis Study
- Relationship between Normalized Image Log Slope and Chemical Gradient in Chemically Amplified Extreme Ultraviolet Resists
- Effects of Ester Groups on Proton Generation and Diffusion in Polymethacrylate Matrices
- Effects of Polymer Interference during Acid Generation on Latent Image Quality of Extreme Ultraviolet Resists
- Polymer Screening Method for Chemically Amplified Electron Beam and X-Ray Resists
- Experimental Studies of Transverse and Longitudinal Beam Dynamics in Photoinjector
- Radiation Chemistry in Chemically Amplified Resists
- Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
- Study of Acid-Base Equilibrium in Chemically Amplified Resist
- Correlation between $C_{37}$ Parameters and Acid Yields in Chemically Amplified Resists upon Exposure to 75 keV Electron Beam
- Difference of Spur Distribution in Chemically Amplified Resists upon Exposure to Electron Beam and Extreme Ultraviolet Radiation
- Full-dimensional Sampling and Analysis of BSSRDF
- Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency
- Study of Interrelation Between Reaction of Polymer-Bound/Blend Photoacid Generator with Solvated Electron and Acid Generation Efficiency (Special Issue : Microprocesses and Nanotechnology)
- High-Absorption Resist Process for Extreme Ultraviolet Lithography
- Latent Image Created Using Small-Field Exposure Tool for Extreme Ultraviolet Lithography
- Full-dimensional Sampling and Analysis of BSSRDF
- Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists Used for Electron-Beam Lithography