Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography : Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)
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概要
- 論文の詳細を見る
- 2006-09-15
著者
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TAGAWA Seiichi
The Institute of Scientific and Industrial Research, Osaka University
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関 修平
大阪大学産業科学研究所
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OKAMOTO Kazumasa
The Institute of Scientific and Industrial Research, Osaka University
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research, Osaka University
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Tagawa S
The Inst. Of Scientific And Industrial Res. Osaka Univ.
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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Kozawa Takahiro
The Institute Of Scientific And Industrial Research Osaka University
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KAI Toshiyuki
JSR Corp.
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SHIMOKAWA Tsutomu
JSR Corp.
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NAKANO Atsuro
The Institute of Scientific and Industrial Research, Osaka University
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Tagawa S
Osaka Univ. Osaka Jpn
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Nakano Atsuro
The Institute Of Scientific And Industrial Research Osaka University
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Okamoto K
The Institute Of Scientific And Industrial Research Osaka University
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Kai Toshiyuki
Jsr Corp. Mie Jpn
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Okamoto Kazumasa
The Institute Of Scientific And Industrial Research Osaka University
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古沢 孝弘
Osaka University
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