Optimum Dissolution Point of Chemically Amplified Resists in Terms of Trade-Off Relationships between Resolution, Line Edge Roughness, and Sensitivity
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概要
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The trade-off relationships between resolution, line edge roughness (LER), and sensitivity are the most critical issue in the development of chemically amplified resists used for extreme ultraviolet (EUV) lithography. The dissolution point plays an important role in determining the trade-off relationships. In this study, the relationship between dissolution point and LER (DP-LER relationship) was theoretically investigated. The dependence of the DP-LER relationship on half-pitch, normalized image log slope, and the effective reaction radius for deprotection was clarified.
- 2011-02-25
著者
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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Yamamoto Hiroki
The Institute of Scientific and Industrial Research (ISIR), Osaka University, Ibaraki, Osaka 567-0047, Japan
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research (ISIR), Osaka University
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