Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
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概要
- 論文の詳細を見る
We investigated the relationship between line edge roughness (LER) and the concentration gradient of chemical compounds that determines the solubility of the resist (chemical gradient). Two-dimensional (half-pitch and exposure dose) matrices of resist line width and LER were analyzed on the basis of the sensitization mechanisms of chemically amplified resists for extreme ultraviolet (EUV) lithography. The latent images of resist patterns were successfully reproduced by assuming that LER is inversely proportional to the chemical gradient. The product of LER and normalized chemical gradient was 0.31.
- Japan Society of Applied Physicsの論文
- 2010-03-25
著者
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TAGAWA Seiichi
The Institute of Scientific and Industrial Research, Osaka University
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関 修平
大阪大学産業科学研究所
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KOZAWA Takahiro
The Institute of Scientific and Industrial Research, Osaka University
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Tagawa S
The Inst. Of Scientific And Industrial Res. Osaka Univ.
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Tagawa Seiichi
The Institute Of Scientific And Industrial Research
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ITANI Toshiro
Semiconductor Leading Edge Technolgies, Inc.
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Kozawa Takahiro
The Institute Of Scientific And Industrial Research Osaka University
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Iwamoto T
Research And Analytical Center For Giant Molecules Graduate School Of Science Tohoku University
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Oizumi Hiroaki
Semiconductor Leading Edge Technologies Inc. (selete)
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Itani T
Semiconductor Leading Edge Technologies Inc. (selete)
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Tagawa S
Osaka Univ. Osaka Jpn
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Itani Toshiro
Semiconductor Leading Edge Technol. Ibaraki Jpn
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Oizumi Hiroaki
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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Itani Toshiro
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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古沢 孝弘
Osaka University
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Itani Toshiro
Euvl Infrastructure Dev. Center Inc. Ibaraki Jpn
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