集束イオンビーム加工によるサファイヤ基板上のナノステップ制御

概要

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Nano-dots array whose diameter and interval were approximately 200nm and 750nm, respectively, were made parallel to the atomic step edges on sapphire wafers by focused ion beam (FIB) system. Upon annealing a bunched multi-steps structure formed at regularintervals and straight because the steps were pinned at the nano-dots. The step heights andterrace widths were approximately 2.0nm, 700nm in off-angle 0.15° and 10.0nm, 350nm in off-angle 1.0°, respectively.
社団法人日本セラミックス協会の論文
2005-07-01