レーザーMBE法による磁性酸化物の原子層制御とナノ構造の構築

概要

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The atomic-scale growth control and nanostructure construction of magnetic oxide thin films were investigated by using the authors' oxide heteroepitaxy technique based on nanoscale substrate-engineering and atomic layer control via laser MBE, namely, pulsed laser deposition in ultrahigh vacuum. Two novel forms of heteroepitaxy were attained : (1)termination-regulated molecular layer-by-layer epitaxy of La_<0.7>Sr_<0.3>MnO_3 thin films, and(2)step-decoration epitaxy resulting in nanowire or nanodot structures of magnetic oxides such as(Mn, Zn)ferrite, Fe_3O_4 and NiO on ultrasmooth sapphire(0001)substrates with straight atomic steps. The nanowires show uniform configurations reflecting the straight step edges of the ultrasmooth sapphire substrates. The height of the nanowires is about 0.5 nm, close to the interplanar spacing of the(111)plane. Nanodots of Fe_3O_4 were fabricated on the 2 nm-high bunching-stepped ultrasmooth substrates.
社団法人日本磁気学会の論文
2001-09-01