Tagawa S | The Inst. Of Scientific And Industrial Res. Osaka Univ.

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22pRE-4 高エネルギーイオン照射によって誘起されたFe-Rh合金における微細磁気構造(放射線物理(固体内衝突・損傷過程),領域1,原子・分子,量子エレクトロニクス,放射線物理)
Effect of inhomogeneous acid distribution on line edge roughness- relationship to line edge roughness originating from chemical gradient
σ共役高分子の電子構造とナノ構造化特性
マイクロ波による電極レス電荷キャリア移動度測定
集束イオンビーム加工によるサファイヤ基板上のナノステップ制御
Pulse Radiolysis of Hexameric Nitrite Reductase Containing Two Type 1 Cu Sites in a Monomer
The Intramolecular Electron Transfer between the Type 1 Cu and the Type 2 Cu in a Mutant of Hyphomicrobium Nitrite Reductase
Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation
高分子材料の単一粒子ナノ加工と構造制御
イオンビームを用いたナノワイヤーの形成 (特集新たな技術の発掘を目指して(1)材料分野)
Charge Transport Properties of Hexabenzocoronene Nanotubes by Field Effect : Influence of the Oligoether Side Chains on the Mobility
X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film
Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations
Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists for Extreme Ultraviolet Lithography
Stroboscopic Picosecond Pulse Radiolysis Using Near-Ultraviolet-Enhanced Femtosecond Continuum Generated by CaF_2
Mobilities of Charge Carriers in Dendrite and Linear Oligogermanes by Flash Photolysis Time-resolved Microwave Conductivity Technique
Delocalization of Positive and Negative Charge Carriers on Oligo- and Poly-fluorenes Studied by Low-Temperature Matrix Isolation Technique
Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography
Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation
Enhancement of Acid Production in Chemically Amplified Resist for Extreme Ultraviolet Lithography
Difference in Reaction Schemes in Photolysis of Triphenylsulfonium Salts between 248nm and Dry/Wet 193nm Resists
Sensitization distance and acid generation efficiency in a model system of chemically amplified electron beam resist with methacrylate backbone polymer
Formation of isolated ultrafine optical nanofibers by single particle nanofabrication technique
Acid Generation Mechanism of Poly(4-hydroxystyrene)-Based Chemically Amplified Resists for Post-Optical Lithography : Acid Yield and Deprotonation Behavior of Poly(4-hydroxystyrene) and Poly(4-methoxystyrene)
Reactivity of Acid Generators for Chemically Amplified Resists with Low-Energy Electrons
Reaction Mechanisms of Brominated Chemically Amplified Resists
Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
Protonation Sites in Chemically Amplified Resists for Electron-Beam Lithography
Dissolution kinetics in chemically amplified EUV resist
Electron Beam Lithography Using Highly Sensitive Negative Type of Plant-Based Resist Material Derived from Biomass on Hardmask Layer
Dissolution Kinetics in Polymer-Bound and Polymer-Blended Photo-Acid Generators
Basic Aspects of Acid Generation Process in Chemically Amplified Electron Beam Resist

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