In-Diffusion and Isothermal Annealing of Iron-Related Defects in Czochralski N-Type Silicon
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概要
- 論文の詳細を見る
Electrically active iron-related defects in Czochralski (CZ) n-type silicon have been studied using deep level transient spectroscopy (DLTS) and the Hall effect. Iron-related defects observed in CZ n-type silicon are identical to those in floating zoned (FZ) n-type silicon. These observed defects can be related to complexes, including iron atoms.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Kitagawa Hajime
Department Of Electronics Faculty Of Engineering Fukuoka Institute Of Tecnology
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tanaka Shuji
Department Of Information Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Tanaka Shuji
Department Of Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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