Distribution of Electrically Active Nickel Atoms in Dislocation-Free N-and P-Type Silicon Crystals Measured by Deep Level Transient Spectroscopy
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概要
- 論文の詳細を見る
Distribution profiles of electrically active nickel atoms in n-and p-type dislocation-free silicon are measured by means of the deep level transient spectroscopy (DLTS) on Schottky barrier diodes (SBD) fabricated on nickel-doped silicon. The processes of lapping-off the surface, etching, SBD formation and DLTS measurement were repeated on one sample until the total removed-off thickness exceeded the half of the initial sample thickness. The distribution profiles were evaluated by measuring the concentrations of the electron trap (nickel acceptor level) in n-type and the hole trap (nickel donor level) in p-type silicon as functions of x/l, where x is the distance from the surface and l is the sample thickness. The distributions manifest U-shaped diffusion profiles irrespective of one-sided or double-sided diffusion conditions. The experimental results have shown, in the bulk, the flat profiles peculiar to those according to the dissociative mechanism of diffusion in which the sinks and sources of lattice vacancies are present in the bulk.
- 福岡工業大学の論文
- 2006-09-30
著者
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TANAKA Shuji
Department of Nanomechanics, Graduate School of Engineering, Tohoku University
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KITAGAWA Hajime
Department of Electronic Materials Engineering, Fukuoka Institute of Technology
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Kitagawa Hajime
Department Of Information Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Kitagawa Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tanaka Shuji
Department Of Information Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Tanaka Shuji
Department Of Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Tanaka Shuji
Department of Electronic Materials Engineering, Fukuoka Institute of Technology,
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TANAKA Shuji
Department of Chemistry, Faculty of Science, Kyushu University
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