Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-11-15
著者
-
TANAKA Shuji
Department of Nanomechanics, Graduate School of Engineering, Tohoku University
-
Ikari T
Miyazaki Univ. Miyazaki Jpn
-
Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
-
Ikari Tetsuo
Faculty Of Engineering University Of Miyazaki
-
Tanaka S
Fukuoka Inst. Technol. Fukuoka Jpn
-
KITAGAWA Hajime
Department of Electronic Materials Engineering, Fukuoka Institute of Technology
-
Kitagawa H
Canon Inc. Utsunomiya Jpn
関連論文
- HTS-rf-SQUIDを用いた低磁場NMRに関する研究
- ロボット式モバイルHTS-SQUID非破壊検査装置による水素燃料タンクの欠陥検出
- 移動する磁気微粒子検出のためのマルチチャンネルHTS-SQUIDシステムの開発
- 磁場耐性の高いHTS-SQUIDを用いたロボット式モバイル非破壊検査装置
- 超電導SQUID技術 (特集 超電導技術の最近の動向)
- Preparation of Thin Lithium Niobate Layer on Silicon Wafer for Wafer-level Integration of Acoustic Devices and LSI
- 有限要素法による多層磁気シールドルーム開口部の漏洩磁界に関する検討
- 磁気シールドルーム開口部の漏洩磁界に関する検討
- 冷凍機冷却HTS-SQUIDグラジオメータを用いたロボットアーム式モバイル非破壊検査装置の開発
- 高温超電導SQUIDを用いたアルミ撚り線の素線断線の検出
- 高温超電導SQUIDを用いた電力用アルミ撚り線の断線非破壊検査
- Electrical Properties of Layered ZrSe_2 Single Crystals Annealed in Selenium Atmosphere
- Effect of Isothermal Annealing on Crystallization Mechanism of Amorphous Ni_Cr_P_ Metallic Alloys
- Photoacoustic Signals from Ion-Implanted and Epitaxially Grown Layers on Silicon Substrate
- Spatial Distribution of EL2 in GaAs Wafer Determined by Photoacoustic Spectroscopy
- Force-Displacement Characteristics of Fluxoid Lattice and Pinning Potential in Y-Ba-Cu-O Bulk Superconductor
- Effect of Surface States on Piezoelectric Photothermal Specta of Silicon Single Crystals
- Application of Screen-Printed Catalytic E1ectrodes to MEMS-Based Fuel Cells (特集:燃料電池を支えるMEMS/NEMS技術)
- Debris-Free Laser-Assisted Low-Stress Dicing for Multi-Layered MEMS : Separation Method of Glass Layer
- Micro-Nano Electro Mechanical Systems
- Micro Industry Equipments(Micro Mechanical Engineering)
- A24-041 MICRO INDUSTRY EQUIPMENTS
- Vertical Diaphragm Electrostatic Actuator for a High Density Ink Jet Printer Head
- Debris-free Low-stress High-speed Laser-assisted Dicing for Multi-layered MEMS
- Debris-Free High-Speed Laser-Assisted Low-Stress Dicing for Multi-Layered MEMS
- 高温超伝導SQUIDを用いた水素燃料用CFRP積層アルミライナーの非破壊検査
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- ロボット式モバイルHTS-SQUID非破壊検査装置
- SQUID高感度磁気センサを用いた磁性金属微粒子の検出
- 低磁場SQUID-NMRシステムの開発
- ロボットアームを用いた冷凍機冷却モバイルHTS-SQUID非破壊検査システム
- HTS SQUIDを用いた非破壊検査技術の開発--金属配管の微小欠陥の検出
- HTS SQUIDを用いた非破壊検査技術の開発 : 金属配管へのSQUID NDEの適用(SQUID,一般)
- HTS SQUIDを用いた非破壊検査技術の開発 : 金属配管へのSQUID NDEの適用
- HTS SQUID グラジオメータを用いた異種金属接合の非破壊評価
- 高温超伝導SQUIDを用いた食品内異物検査の現状と展望
- Electrostatically Controlled, Pneumatically Actuated Microvalve with Low Pressure Loss
- MEMS-Based Solid Propellant Rocket Array Thruster with Electrical Feedthroughs
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- In-Diffusion and Annealing of Copper in Germanium
- Numerical Solutions of Basic Equations for Kick-Out Mechanism of Diffusion
- Diffusion Mechanism of Nickel and Point Defects in Silicon
- Criterions for Basic Assumptions in Kick-Out Mechanism of Diffusion
- Diffusion and Electrical Properties of Iron-Related Defects in N-Type Silicon Grown by Czochralski- and Floating Zone Method
- Iron-Related Donor Level in N-Type Silicon
- Solid Solubility of Cobalt in Silicon
- Fundamenral Absorption Edge of γ-InSe
- Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal Signals
- Investigation of EL6 Deep Level in Semi-Insulating GaAs by Means of a Temperature Dependence of Piezoelectric Photothermal Signal
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
- Optical and Electrical Properties of p-GaAe Doped with Sb
- Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
- Piezoelectric Photothermal Study of the Optical Absorption Spectra of Microcrystalline Silicon
- Design and Fabrication of Passive Wireless SAW Sensor for Pressure Measurement
- Modulation of Carbachol-Induced Cl^- Currents and Fluid Secretion by Isoproterenol in Rat Submandibular Acinar Cells
- Role of Calcium Ions in the Potentiation by Isoproterenol of Carbachol-Induced Ionic Currents and Secretion Activity in Rat Salivary Glands
- Distribution of Substitutional Nickel Atoms in Dislocated Silicon Crystal
- Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Transient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
- In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
- Aromatic Allylsulfenylation with in Situ Generated Allylic Thiols under the Heck Conditions
- Aromatic Allylsulfenylation with in Situ Generated Allyl Thiols under the Heck Conditions
- Silver(I)-Catalyzed Aminocyclization of 2,3-Butadienyl and 3,4-Pentadienyl Carbamates : An Efficient and Stereoselective Synthesis of 4-Viny-2-oxazolidinones and 4-Vinyltetrahydro-2H-1,3-oxazin-2-ones
- MEMS-based Air Turbine with Radial-inflow Type Journal Bearing
- Fabrication of Anti-Corrosive Capacitive Vacuum Sensors with a Silicon Carbide/Polysilicon Bi-Layer Diaphragm and Electrical Through-Hole Connections on the Opposite Side
- Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy
- Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
- Photoacoustic Spectra for Porous Silicon Using Piezoelectric Transducer and Microphone
- Diffusion Coefficient of Cobalt in Silicon
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Annealing Behavior of Deep Trap Level in p-GaTe
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Non-Radiative Carrier Recombination Process in AlGaAs/GaAs Hetero-Structure investigated by Piezoelectric Photothermal Spectroscopy
- Photoacoustic Spectra of Si Wafers at Liquid Helium Temperature
- Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon
- Energy Levels and Solubility of Electrically Active Cobalt in Silicon Studied by Combined Hall and DLTS Measurements
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- Piezoelectric Photoacoustic and Photoluminescence Properties of CuIn_XGa_Se_2 Alloys
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Distribution of Electrically Active Nickel Atoms in Dislocation-Free N-and P-Type Silicon Crystals Measured by Deep Level Transient Spectroscopy
- Nonradiative Investigation of Hole Photoionization Spectrum of EL2 in Carbon Concentration Controlled Semi-Insulating GaAs
- Piezoelectric Photothermal Spectra of Co Doped ZnO Semiconductor
- Crystallization of Amorphous GeSe_2 Semiconductor by Isothermal Annealing without Light Radiation
- Extension of Operational Range of Semiconductor Optical Add and Drop Multiplexer
- Sidemode Suppression of Optical Add-and-Drop Multiplexer Utilizing Vertically Coupled InGaAsP Waveguides
- A Study of Liquid Dispensing Head Using Fluidic Inertia
- Interference-Term Elimination for Wigner Distribution Using a Frequency Domain Adaptive Filter
- Low-Stress Epitaxial Polysilicon Process for Micromirror Devices