Printing Sub-100 Nanometer Features Near-field Photolithography
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概要
- 論文の詳細を見る
In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100 nm features on a commercially available photoresist using 442-nm-wavelength light.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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畑村 洋太郎
東京大学:工学院大学
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Nakao Masayuki
Department Of Cardiology Kanagawa Cardiovascular And Respiratry Center
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KOMURO Masanori
Electrotechnical Laboratory
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HIROSHIMA Hiroshi
Electrotechnical Laboratory
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Tanaka Shuji
Department Of Nanomechanics Tohoku University
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Hatamura Yotaro
Department Of Engineering Synthesis Graduate School Of Engineering University Of Tokyo
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中尾 政之
東大
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Komuro Masanori
Electrotechnical Laboratory Ministry Of International Trade And Industry
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Hatakeyama Masahiro
Ebara Research Co. Ltd.
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Tanaka Shuji
Department Of Information Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Tanaka Shuji
Department Of Engineering Synthesis Faculty Of Engineering The University Of Tokyo
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Tanaka Shuji
Department Of Electronics Faculty Of Engineering Fukuoka Institute Of Technology
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Hiroshima Hiroshi
Electrotechnical Laboratory Ministry Of International Trade And Industry
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Tanaka Shuji
Department of Electronic Materials Engineering, Fukuoka Institute of Technology,
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TANAKA Shuji
Department of Chemistry, Faculty of Science, Kyushu University
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