High Impurity Doping in Si-MBE Using Liquid Ga Ion Source
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Low-energy implantation doping techniques in Si-MBE using a liquid metal ion source of Ga are reported. Ga ions accelerated up to 500 V or 1000 V are projected onto the MBE layer during film growths, where substrate temperatures range from 550℃ to 1100℃. The maximum carrier concentration of 1×10^<19> cm^<-3> is obtained under the conditions of 〜800℃ at the accelerating voltage of 500 V. This value is 5 or 100 times as high as cases of partial ionization or thermal evaporation of Ga, respectively. Below 〜800℃, the carrier concentration is strongly ruled by the solid solubility. At higher temperatures, the rapid decrease of incorporation is observed, which is probably caused by re-evaporation of the implanted Ga atoms.
- 社団法人応用物理学会の論文
- 1983-12-20
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