Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_<1-x> MBE Growth on Si(001) Substrates

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概要

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• Reflection high-energy electron diffraction (RHEED) intensity oscillations during the heteroepitaxy of Ge_xSi_<1-x> on a Si(001) substrate were observed for the first time. The oscillation amplitude decreased rapidly during Ge_xSi_<1-x> growth due to the three-dimensional growth, which had a strong dependence on the Ge mole fraction. The layer thickness of Ge_xSi_<1-x>/Si strained-layer superlattices was controlled precisely by monitoring the RHEED intensity oscillation. The interface roughness of Ge_xSi_<1-x>/Si heterojunctions was examined by the observations of RHEED intensity oscillations and high-resolution transmission electron microscope images.

• 社団法人応用物理学会の論文
• 1987-05-20

著者

• Bando Y

  Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science

• SAKAMOTO Tsunenori

  Electrotechnical Laboratory

• NAGAO Satoru

  Research, Center, Mitsubishi Kasei Co.

• Bando Yoshio

  National Institute For Materials Science Advanced Materials Laboratory

• Bando Yoshio

  International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims

• Nagao S

  Mitsubishi Chemical Corp. Ibaraki Jpn

• Sakamoto Tsunenori

  Electrotechnical Laboratory Tsukuba

• Nagao Satoru

  Mitsubishi Chemical Group Science And Technology Research Center Inc.

• SAKAMOTO Kinihiro

  Electrotechnical Laboratory, Tsukuba

• HASHIGUTCHI Gen

  Chuo University

• KUNIYOSHI Katsuya

  Meiji University

• Bando Yoshio

  Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science

• Bando Yoshio

  Advanced Materials Laboratory National Institute For Materials Science

• Sakamoto Kinihiro

  Electrotechnical Laboratory Tsukuba

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