Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
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概要
- 論文の詳細を見る
Si / Ge 7 Si monolayer heterostructures grown on Si(100) by molecular beam epitaxy(MBE) have been studied by a surface sensitive EXAFS technique. It is shown thatthe heterointerfaces at several Lens of angstrom below the surface can be probed bymonitoring fluorescence yield with a high energy resolution detector in a total reflection geometry. The formation of ordered Si / Ge /Si heterointerface is evidenced by aFourier transform analysis of the Ge K-EXAFS. In the Si / Ge / Si heterostructure, thedetermined Ge-81 distance suggests a large contribution of bond length relaxation.
- 社団法人日本物理学会の論文
- 1988-06-15
著者
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Oizumi H
Electrotechnical Laboratory
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ISHIGURO Takehiko
Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotechnical Laboratory
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YAO Takafumi
Electrotechnical Laboratory
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Ishiguro T
Kyoto Univ. Kyoto
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Matsushita T
Osaka Sangyo Univ. Osaka Jpn
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Matsushita Tadashi
National Laboratory For High Energy Physics
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SAKAMOTO Tsunenori
Electrotechnical Laboratory
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SAKAMOTO Kunihiro
Electrotechnical Laboratory
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OYANAGI Hiroyuki
National Institute for Advanced Industrial Science and Technology
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Ishiguro Takehiko
Electrotechincal Laboratory
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Oyanagi Hiroyuki
Optoelectronics Division Electrotechnical Laboratory
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SAKAMOTO Keishi
Japan Atomic Energy Agency
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ISHIGURO Takashi
Department of Electrical Engineering, Nagaoka University of Technology
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Sakamoto T
Univ. Tokyo Tokyo
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Oyanagi H
Optoelectronics Division Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotech. Lab. Tsukuba
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Ishiguro T
Nagaoka Univ. Technol. Nagaoka Jpn
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Yao Takafumi
Electrical Laboratory
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OYANAGI Hiroyuki
Electrotech. Lab. , Tsukuba
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