Coverage Dependent Structure of Electrochemically Deposited Cu on p-GaAs(100) in H_2SO_4 Solution Determined by In Situ Surface X-Ray Absorption Fine Structure Spectra

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概要

• 論文の詳細を見る

著者

• Oyanagi Hiroyuki

  Electrotechnical Laboratory

• Uosaki Kohei

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• KONDO Toshihiro

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido Universit

• Kondo T

  Hokkaido Univ. Sapporo

• OYANAGI Hiroyuki

  National Institute for Advanced Industrial Science and Technology

• Oyanagi Hiroyuki

  Optoelectronics Division Electrotechnical Laboratory

• Kondo Toshihiro

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• Kondo Toshihiro

  Physical Chemistry Laboratory Department Of Chemistry Faculty Of Science Hokkaido University

• Uosaki Kohei

  Physical Chemistry Laboratory Department Of Chemistry Faculty Of Science Hokkaido University

• Oyanagi H

  Optoelectronics Division Electrotechnical Laboratory

• Oyanagi Hiroyuki

  Electrotech. Lab. Tsukuba

• TAMURA Kazuhisa

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido Universit

• KOINUMA Michio

  Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido Universit

• Kondo T

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• Tamura Kazuhisa

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• Koinuma M

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• Uosaki Kohei

  National Institute For Materials Science (nims)

• OYANAGI Hiroyuki

  Electrotech. Lab. , Tsukuba

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