Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films;Ion-Beam-Induced Modification of Thin Ni Layers on Si(100)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Oizumi H
Electrotechnical Laboratory
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ISHIGURO Takehiko
Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotechnical Laboratory
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Matsushita T
Osaka Sangyo Univ. Osaka Jpn
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MATSUSHITA Tadashi
Electrotechnical Laboratory
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TANOUE Hisao
Photon Factory, National Laboratory for High Energy Physics
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KOHRA Kazutake
Electrotechnical Laboratory
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OYANAGI Hiroyuki
National Institute for Advanced Industrial Science and Technology
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TANOUE Hisao
National Institute of Advanced Industrial Science and Technology (AIST)
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Ishiguro Takehiko
Electrotechincal Laboratory
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Oyanagi Hiroyuki
Optoelectronics Division Electrotechnical Laboratory
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Tanoue H
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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Oyanagi H
Optoelectronics Division Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotech. Lab. Tsukuba
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Ishiguro T
Nagaoka Univ. Technol. Nagaoka Jpn
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Tanoue Hisao
Photon Factory National Laboratory For High Energy Physics
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OYANAGI Hiroyuki
Electrotech. Lab. , Tsukuba
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