The Effects of Nitrogen and Plasma Power on Electrochemical Properties of Boron-Doped Diamond Electrodes Grown by MPCVD

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概要

• 論文の詳細を見る

• The influences of nitrogen addition and the attenuation of microwave power during microwave plasma-assisted chemical vapor deposition (MPCVD) of diamond films on electrochemical properties of the grown films were investigated. Although diamond films grown in the presence of a small amount of nitrogen did not contain sp2 carbon and appeared to be normally deposited films, the electrical and electrochemical properties were different from films grown under an atmosphere without nitrogen. Especially, the potential windows of diamond films grown in the presence of nitrogen at low microwave power were very wide and extended to 3.6 V in sulfuric acid solution, which is comparable to the widest value of the potential window of diamond electrodes reported till now. It was also found that the attenuation of the plasma power during MPCVD by itself was effective in the expansion of the potential window because of the defect-free growth of diamond crystals.

• The Electrochemical Societyの論文

著者

• Uosaki Kohei

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• Uosaki Kohei

  Phyical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

• Ohtani B

  Catalysis Research Center Hokkaido University

• Fujishima Akira

  Division Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo

• Yagi Ichizo

  Physical Chemistry Laboratory Division Of Chemistry Graduate School Of Science Hokkaido University

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