Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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Oizumi H
Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotechnical Laboratory
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SAKAMOTO Tsunenori
Electrotechnical Laboratory
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SAKAMOTO Kunihiro
Electrotechnical Laboratory
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SHIODA Ryu
Electrotechnical Laboratory
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OYANAGI Hiroyuki
National Institute for Advanced Industrial Science and Technology
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Oyanagi Hiroyuki
Optoelectronics Division Electrotechnical Laboratory
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SAKAMOTO Keishi
Japan Atomic Energy Agency
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Sakamoto T
Univ. Tokyo Tokyo
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Oyanagi H
Optoelectronics Division Electrotechnical Laboratory
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Oyanagi Hiroyuki
Electrotech. Lab. Tsukuba
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OYANAGI Hiroyuki
Electrotech. Lab. , Tsukuba
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