Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy
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概要
- 論文の詳細を見る
Optical studies of ultrathin Ge/Si superlattices grown on (001) Si substrates by phase-locked epitaxy have been carried out. The structures consist of alternating layers of pure Ge and Si with periods of 8, 10 and 12 monolayers. Using photo- and electroreflectance (PR and ER), four structurally induced optical transitions have been observed in the energy ragion 0.76-2.5 eV in both systems with periods of 8 and 10 monolayers. The transition energies show a blue shift with decreasing strain. At a growth temperature of 400℃, the PR and ER spectra of Ge_6/Si_6, which has a period of 12 monolayers, show not alloylike behavior but superlattice features similar to the samples with periods of 8 and 10 monolayers.
- 社団法人応用物理学会の論文
- 1990-03-20
著者
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ASAMI Kumiko
The Institute of Scientific and Industrial Research, Osaka University
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SAKAMOTO Tsunenori
Electrotechnical Laboratory
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SAKAMOTO Kunihiro
Electrotechnical Laboratory
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Miki Kazushi
Electrotechnical Laboratory
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Asami Kumiko
The Institute Of Scientific And Industrial Research Osaha University
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Gonda Shun-ichi
The Institute Of Scientific And Industrial Research Osaka University
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