Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
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概要
- 論文の詳細を見る
A Si metal-insulator-semiconductor tunnel emitter transistor which has quite a thin base layer formed by an inversion hole layer was fabricated. A common emitter current gain of 5 was obtained at room temperature. The emitter base bias at which the base current began to flow coincided well with the calculated turn on voltage at which the inversion occurred in the MIS structure. It was confirmed for the first time that the inversion hole layer really worked as the base of the transistor.
- 社団法人応用物理学会の論文
- 1991-12-01
著者
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SAKAMOTO Kunihiro
Electrotechnical Laboratory
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Sakamoto Kunihiro
Electrotechnical Laboratory Miti
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Yoshimoto T
Hokkaido Tokai Univ. Sapporo Jpn
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Yoshimoto Tomomi
School Of Engineering Hokkaido Tokai University
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SAKATA Toshimiti
School of Engineering, Department of Electronic and Information Engineertng, Hokkaido Tokai Universi
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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Sakata Toshimiti
School Of Engineering Department Of Electronic And Information Engineertng Hokkaido Tokai University
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MATSUMOTO Kazuhiko
Electrotechnical Laboratory, MITI
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