Room Temperature Nb-Based Single-Electron Transistors
スポンサーリンク
概要
- 論文の詳細を見る
Room temperature operation of Nb/Nb oxide-based single-electron transistors (SETs) was successfully achieved and was reported in detail. First, the SETs were fabricated using a scanning probe microscope (SPM)-based anodic oxidation technique and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two types of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-03-30
著者
-
SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
-
MIURA Naruhisa
Tokyo Institute of Technology
-
Konagai Makoto
Tokyo Inst. Technol. Tokyo Jpn
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
-
Miura Naruhisa
Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
-
Konagai Makoto
Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
-
Shirakashi Jun-ichi
Electrotechnical Laboratory (ETL), 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
関連論文
- Effect of CdCl_2 Treatment Conditions and Stoichiometry on The Deep Level, Carrier Lifetime and Converstion Efficiency of CdTe Thin Film Solar Cells
- Direct Modification of Magnetic Domains in Co Nanostructures by Atomic Force Microscope Lithography
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Textured ZnO Thin Films for Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Observation of Electroluminescence from Amorphous Silicon Solar Cells at Room Temperature
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Planer-type Ferromagnetic Tunnel Junctions Fabricated by Atomic Force Microscope for Nonvolatile Memory
- (GaAl)As/GaAs Solar Cells-Dopant Study on Zn and Be : III-3: III-V COMPOUND SOLAR CELLS
- Model for Localized States Distributuon and Light Dependent Effects in Amorphous Silicon Solar Cells
- Minority Carrier Diffusion Length in Amorphous Si Schottky Barrier Solar Cells
- Photovoltaic Properties of a・Si-F-H and a・Si-h Prepared by DC Glow Discharge : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Single Electron Memory at Romm Temperature: Experiment and Simulation
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
- Single-Electron Tunneling through Amorphous Carbon Dots Array
- High Temperature Stable W-GaAs Schottky Barrier
- Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
- High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition
- Ultra-Low Biased Field Emitter Using Single Wall Carbon Nanotube Directly Grown onto Silicon Tip by Thermal CVD
- Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM
- NiFe-Based Nanostructures Fabricated Using an Atomic Force Microscope
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT
- Improvement of a-Si Solar Cell Fabricated by Mercury-Sensitized Photochemical Vapor Deposition Using H_2 Dilution Technique
- Effect of Fluorine on the Photovoltaic Properties of Amorphous Silicon Prepared by DC Glow Discharge : III-1: AMORPHOUS SOLAR CELLS : Film Deposition
- Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type Delta-Doped HEMT
- Room Temperature Nb-Based Single-Electron Transistors