Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
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概要
- 論文の詳細を見る
A first submicron-gate ion-implanted self-aligned GaAs FET that has ever been made is reported. The FET has a 0.5μm-long, 0.24μm-thick tungsten gate which was fabricated by lift-off process and subsequently served as a mask for n^+-implantation. The self-aligned FET showed the transconductance 2.4 times as large as that of a conventional FET of the same dimensions. The source-gate breakdown voltage was in excess of -3 V.
- 社団法人応用物理学会の論文
- 1982-07-20
著者
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Iida Masamori
Electrical Engineering Department Tokai University
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Hashizume Nobuo
Electrotechnical Laboratory
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Iida Masamori
Electrotechnical Laboratory:(present Address) Faculty Of Engineering Tokai University
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Kurosu Tateki
Electrotechnical Laboratory:(present Address) Faculty Of Engineering Tokai University
-
Atoda Nobuhumi
Electrotechnical Laboratory
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NISHIMURA Kazuhiro
Electrotechnical Laboratory
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TOMIZAWA Kazutaka
Electrotechnical Laboratory
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Tomizawa Kazutaka
Electrotechnical Laboratory:(present Address) Faculty Of Engineering Meiji University
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
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Nishimura Kazuhiro
Electrotechnical Laboratory:(present Address) Faculty Of Engineering Meiji University
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