Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type Delta-Doped HEMT
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概要
- 論文の詳細を見る
Using an atomic force microscope, we have formed an oxide wire on a channel region of the inverted-type delta-doped high-electron-mobility transistor. We discovered that the oxide wire is etched in water, and that consequently a trench is formed. Using this property, we have controlled the height of the potential barrier in the two-dimensional electron gas channel.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Ishii Masami
Electrotechnical Laboratory
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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Ishii Masami
Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Matsumoto Kazuhiko
Electrotechnical Laboratory, MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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