GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
In the GaAs inversion-baser bipolar transistor, the graded layer was introduced to the emitter barrier. It was proved that the graded layer decreased the effective barrier height of the emitter barrier and enhanced the electron flow from the emitter to the collector. These effects of the graded layer improved the current gain of the GaAs IBT by two orders of magnitude.
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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林 康明
京都工芸繊維大学大学院
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HAYASHI Yutaka
Electrotechnical Laboratory
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林康 明
京都工芸繊維大学工芸学部電子情報工学科
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林 康明
京都工芸繊維大学大学院工芸科学研究科
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Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Hayashi Yuzo
Irie Koken Co. Ltd.
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
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YOSHIMOTO Tomomi
Electrotechnical Laboratory, MITI
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NAGATA Toshiyuki
Electrotechnical Laboratory, MITI
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Yoshimoto T
Hokkaido Tokai Univ. Sapporo Jpn
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Nagata T
Department Of Biological Sciences Graduate School Of Science University Of Tokyo
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Nagata Toshiyuki
Dept. Of Biological Sciences Graduate School Of Science. Univ. Of Tokyo
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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