Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
ISHII Makoto
Optoelectronics Joint Research Laboratory
-
Ishii Masami
Electrotechnical Laboratory
-
Harris James
Stanford University Stanford
-
Ishii M
Electrotechnical Laboratory
-
Ishii M
Optoelectronics Joint Research Laboratory
-
Ishii M
Toyota Central Res. And Dev. Lab. Inc. Aichi Jpn
-
Matsumoto K
Electrotechnical Lab. Ibaraki‐kenn Jpn
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
-
Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
-
Ishii M
Liquid Crystal Lab. Sharp Corp.
-
SHIRAKASHI Jun-ichi
Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology
-
VARTANIAN Bartev
Stanford University
-
Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
-
Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
-
Matsumoto Kazuhisa
Sumitomo Electric Industries Ltd.
-
Harris James
Stanford University Department Of Electrical Engineering
-
Ishii M
Shonan Inst. Technol. Kanagawa Jpn
-
Shirakashi Junichi
Electrotechnical Laboratory
-
Shirakashi Jun-ichi
Electrotechnical Laboratory
-
Matsumoto Kazuhiko
Electrotechnical Laboratory
関連論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
- V-t Characteristics of SF6 Gap Disturbed by a Needle-Shaped Protrusion under Oscillating Transient Overvoltages
- Direct Modification of Magnetic Domains in Co Nanostructures by Atomic Force Microscope Lithography
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Preparation of Superconducting Bi-Pb-Sr-Ca-Cu-O Glass Ceramics with T_=106 K
- Formation of the High-T_c Phase of Bi_Pb_xSr_Ca_Cu_O_y (0 ≦ x ≦ 0.05)
- Effect of Annealing on Superconductivity in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Intermediate Pressing on Superconducting Characteristics in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Cooling Rate on Superconducting Characteristics of Bi-Pb-Sr-Ca-Cu-O Ceramics
- Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics : Electrical Properties of Condensed Matter
- Critical Current Density of Bi-Pb-Sr-Ca-Cu-O Superconducting Ceramics : Electrical Properties of Condensed Matter
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- Study of Surface Processes in the Digital Etching of GaAs
- XANES Analysis of Optical Activation Process of Er in Si:Er2O3 Thin Film:Electronic and Structural Modifications around Er (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- InGaAs/InGaAsP Quantum Well Laser at 2.04 μm for Diode Spectroscopy of Carbon Dioxide Isotope : Optics and Quantum Electronics
- Growth of Ga_In_N_yAs_ Single Quantum Wells on InP(100)Substrate by Metalorganic Chemical Vapor Deposition
- Improvement of Characteristic Temperature in In_Ga_As/InGaAsP Multiple Quantum Well Laser Operating at 1.74 μm for Laser Monitor
- Hydrogen Chloride Gas Monitoring at 1.74 μm with InGaAs/InGaAsP
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- 1.95-μm-wavelength InGaAs/InGaAsP Laser with Compressively Strained Quantum Well Active Layer
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Processing and Superconducting Properties of GdBa_2Cu_3O_ Ceramics : Electrical Properties Condensed Matter
- Influence of Preparative Conditions on the Superconducting Characteristics in GdBa_2Cu_3O_ Ceramics : Electrical Properties of Condensed Matter
- Observation of GdBa_2Cu_3O_ Ceramic Microstructure : Electrical Properties of Condensed Matter
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System : Etching and Deposition Technology
- Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
- Dependence of Magnetic Shielding Property on Critical Current Density
- Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Planer-type Ferromagnetic Tunnel Junctions Fabricated by Atomic Force Microscope for Nonvolatile Memory
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Critical Current Density and Microstructure of Superconducting YBa_2Cu_3O Films Prepared by a Tape Casting Method : Electrical Properties Condensed Matter
- Fabrication of Superconducting YBa_2Cu_3O_ Films by a Tape Casting Method
- Magnetic Detector Using Bi-Pb-Sr-Ca-Cu-O Superconductive Film
- Single Electron Memory at Romm Temperature: Experiment and Simulation
- Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Alignment Technique for Thin-Film-Transistor Liquid-Crystal Displays : Liquid Crystal Display
- Alignment Technique for Thin-Film-Transistor Liquid-Crystal Displays
- Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
- Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAS) Grown on Si Emitters : Surfaces. Interfaces, and Films
- Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques
- Single-Electron Tunneling through Amorphous Carbon Dots Array
- Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
- High Temperature Stable W-GaAs Schottky Barrier
- Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
- Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
- Effect of Arsenic Source on Electron Trap Concentrationsin MBE-Grown Al_Ga_As
- Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al_Ga_As Grown by MBE
- Stacked Optical Disk Drive for Multimedia Files : Drive Technology
- Stacked Optical Disk Drive for Multimedia Files
- Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs
- Computer-Controlled Mapping of Photoluminescence Intensities
- Superficial Aggravation of Sputter-deposited Bi-Sr-Ca-Cu-O Films by Annealing : Electrical Properties of Condensed Matter
- Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
- Ultra-Low Biased Field Emitter Using Single Wall Carbon Nanotube Directly Grown onto Silicon Tip by Thermal CVD
- Characterization of Polyvinylchloride by Means of Sound Velocity and Longitudinal Modulus Measurements
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM
- NiFe-Based Nanostructures Fabricated Using an Atomic Force Microscope
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type Delta-Doped HEMT
- Room Temperature Nb-Based Single-Electron Transistors