Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
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概要
- 論文の詳細を見る
The 1.44 eV photoluminescence peak of the 78 meV acceptor, previously known only in bulk GaAs crystals, has been observed in lightly Si-doped GaAs layers grown by molecular beam epitaxy. This observation provides strong evidence that the 78 meV acceptor is related to the Ga antisite defect (Ga_<As>).
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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MIHARA Minoru
Optoelectronics Joint Research Laboratory
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ISHII Makoto
Optoelectronics Joint Research Laboratory
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Ishii M
Electrotechnical Laboratory
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Ishii M
Optoelectronics Joint Research Laboratory
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Mihara Minoru
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
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Ishii M
Liquid Crystal Lab. Sharp Corp.
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Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
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Miki Masami
Department Of Earth & Space Science Graduate School Of Science Osaka University
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Ishii M
Shonan Inst. Technol. Kanagawa Jpn
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Shinozaki Keisuke
Optoelectronics Joint Research Laboratory
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Naritsuka S
Meijo Univ. Nagoya Jpn
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MANNOH Masaya
Optoelectronics Joint Research Laboratory
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NARITSUKA Shigeya
Optoelectronics Joint Research Laboratory
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