Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates
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概要
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The residual stress in InP layers grown by microchannel epitaxy (MCE) on Si substrates was calculated using the three-dimensional finite element method (FEM). In the calculation, stress is assumed to be produced by the difference in thermal expansion between InP and Si during the cooling stage after the growth. No formation or movement of dislocations, by which the stress is released, is assumed. The calculation shows that the island structures of MCE layers are useful to reduce thermally induced stress. For example, stress in an MCE layer can be reduced to one-hundredth of that of a conventional uniform epitaxial layer. The calculation also shows that the stress at the MCE surface decreases rapidly with increasing the layer thickness. On the other hand, the change in stress is very small with varying the line-seed width or the thickness of the SiO_2 mask. It is shown that the residual stress is further decreased when the MCE layer slips freely on the SiO_2 mask.
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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NARITSUKA Shigeya
Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo
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Naritsuka S
Meijo Univ. Nagoya Jpn
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Naritsuka Shigeya
Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo
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HANDA Ibuki
Department of Electronic Engineering, Graduate School of Engineering, The University of Tokyo
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Handa Ibuki
Department Of Electronic Engineering Graduate School Of Engineering The University Of Tokyo
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Nishinaga Tatau
Department Of Electronic Engineering Graduate School Of Engineering The University Of Tokyo
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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