Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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KIMURA Kozo
Optoelectronics Joint Research Laboratory
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HORIGUCHI Seishi
Optoelectronics Joint Research Laboratory
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MIHARA Minoru
Optoelectronics Joint Research Laboratory
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ISHII Makoto
Optoelectronics Joint Research Laboratory
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Horiguchi Seiji
Ntt Basic Research Laboratories
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Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
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Ishii M
Electrotechnical Laboratory
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Ishii M
Optoelectronics Joint Research Laboratory
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Kanamoto K
Mitsubishi Electric Corp. Hyogo Jpn
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Kanamoto Kyozo
Femtosecond Technology Research Association (festa)
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Ishii M
Liquid Crystal Lab. Sharp Corp.
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Kimura K
Advanced Research Laboratory Nippon Steel Co. Ltd.
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Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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KAMON Koichi
Optoelectronics Joint Research Laboratory
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MASHITA Masao
Optoelectronics Joint Research Laboratory
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Kamon K
Yokohama Research Center Association Of Super-advanced Electronics Technologies:(present Address) Ul
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Ishii M
Shonan Inst. Technol. Kanagawa Jpn
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Mashita M
Research And Development Center Toshiba Corporation
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Horiguchi Seiji
Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
関連論文
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- Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
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