Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine

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The InAlP growth by metalorganic chemical vapor deposition using tertiarybutylphosphine is reported for the first time. Films with mirrorlike surface morphology were obtained at 650℃. In comparision with phosphine, tertiarybutylphosphine is more suitable for growth at lower temperature.
社団法人応用物理学会の論文
1991-08-01

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Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine

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