A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_<1-x>As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-07-20
著者
-
FUJII Toshio
Fujitsu Laboratories Ltd.
-
サンドゥー アダルシュ
東工大
-
Sandhu A
Fujitsu Laboratories Ltd.
-
Sandhu Adarsh
Fujitsu Laboratories Limited
-
ANDO Hideyasu
Fujitsu Laboratories Ltd.
-
ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
-
Fujii Toshio
Fujitsu Laboratories Lid.
-
Ishikawa T
Fujitsu Laboratories Ltd.
-
Ando H
Toshiba Corp. Kawasaki Jpn
関連論文
- Magnetic Imaging by RT-SHPM using GaAs/AlGaAs and Bi- Micro-Hall Probes
- Pyrazoline Dimers for Hole Transport Materials in Organic Electroluminescent Devices
- Novel Europium Complex for Electroluminescent Devices with Sharp Red Emission
- Organic Electroluminescent Devices with 8-Hydroxyquinoline Derivative-Metal Complexes as an Emitter
- Blue Electroluminescence in Thin Films of Azomethin-Zinc Complexes
- 室温走査型マイクロ・ホール・プローブ顕微鏡による磁区観察
- 室温走査型GaAs/AlGaAsヘテロ構造マイクロ・ホール・プローブ顕微鏡による磁界中の磁区観察
- Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
- AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
- Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
- A Novel Technique for Monitoring the Reproducibility of Laser Tape-Target Interactions Using an X-ray Pinhole Camera
- Proton-induced Nuclear Reactions Using Compact High-Contrast High-Intensity Laser
- High Luminance in Organic Electroluminescent Devices with Bis(10-hydroxybenzo[h]quinolinato)beryllium as an Emitter
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
- Detection of magnetic nanoparticles by magnetically mediated self-assembly of superparamagnetic microbeads ((社)日本磁気学会第164回研究会 第29回ナノバイオ磁気工学専門研究会 磁性ナノ粒子の検出とバイオメディカル応用)
- High Sensitivity InSb Hall Effect Biosensor Platform for DNA Detection and Biomolecular Recognition Using Functionalized Magnetic Nanobeads
- High Sensitivity InSb Ultra-Thin Film Micro-Hall Sensors for Bioscreening Applications
- 50nm Hall Sensors for Room Temperature Scanning Hall Probe Microscopy
- Room Temperature Scanning Micro-Hall Probe Microscope Imaging of Ferromagnetic Microstructures in the Presence of 2.5Tesla Pulsed Magnetic Fields Generated by an Integrated Mini Coil : Surfaces, Interfaces, and Films
- Room Temperature Sub-Micron Magnetic Imaging by Scanning Hall Probe Microscopy
- Room Temperature Scanning Hall Probe Microscopy in External Magnetic Fields (論文特集号 〔日本応用磁気学会〕第24回学術講演会)
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- 運動選手を対象としたリアルタイム生体遠隔測定装置の改良
- High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
- Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
- Gas Source Molecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source
- Si_2H_6 Doping of InP in Gas-Source Molecular Beam Epitaxy Using Triethylindium and Phosphine
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
- Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
- A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Dependence of Proton Source Size on Proton Energy Accelerated by Ultrashort Laser Pulse
- Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
- Phase-Sensitive Optical Probe for Surface Acoustic Wave Soliton Investigation
- Experimental Studies on Nonlinear Dispersive Surface Acoustic Waves for Solitons
- Reconstruction of Three-Dimensional Images of Surface Acoustic Waves by Means of Computer-Controlled Laser Probe
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Preparation and Electrical Properties of Rhombohedral Pb(Zr_xTi_)O_3 Thin Films by RF Magnetron Sputtering Method
- Magnetic, Optical and Microwave Properties of Rare-Earth-Substituted Fibrous Yttrium Iron Garnet Single Crystals Grown by Floating Zone Method
- Growth and Optical Properties of Ce-Substituted Fibrous YIG Single Crystals
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Electric Field Effect in Al/SrTiO_3/YBa_2Cu_3O_y Structure in the Normal State
- Dielectric Properties of SrTiO_3 Epitaxial Film and Their Application to Measurement of Work Function of YBa_2Cu_3O_y Epitaxial Film
- Analysis on Electric Field Effect in Al/SrTiO_3/YBa_2Cu_3O_y Structure
- Metal-Insulator-Superconductor Field-Effect-Transistor Using SrTiO_3/YBa_2Cu_3O_y Heteroepitaxial Films
- Epitaxial SrTiO_3 Thin Films Grown by ArF Excimer Laser Deposition
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- 1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors
- Ten-Year Overview and Future Prospects of Write-Once Organic Recordable Media
- Approach for High Speed Recording of 4.7GB Digital Versatile Disc-Recordable
- Growth of K_3Li_Nb_O_ Single-Crystal Fibers
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Simulation of Mode Selectability Characteristics by Phase Constraint in a Bare Coordinate-Transforming Cavity
- Continuous Wavelength Sweep of External Cavity 630 nm Laser Diode without Antireflection Coating on Output Facet
- Coordinate-Transformed and Self-Reproducible Complex Amplitudes Inside Laser Cavities
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- 【ひと・わざ】高感度磁気測定にかけた技術者人生…〔東英工業株式会社〕増田宏さん
- Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
- KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
- GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
- Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
- Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
- Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine
- Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
- Characterization of Maghemite Thin Films Prepared by Spin-Coating a Gel Solution
- High Density Optical Recording on Dye Material Discs: An Approach for Achieving 4.7 GB Density
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Preparation of Cu-O Films by Sputtering Using He Gas ( Plasma Processing)
- Preparation of Cu-O Films by Electron Cyclotron Resonance Plasma-Assisted Sputtering
- Relation between Ge(2) Center and 11.9 mT Hyperfine Structure of ESR Spectra in Ge-Doped Silica Fibers : Magnetism, Magnetic Materials and Devices
- The 1.52μm Absorption Band in Optical Fibers Induced by Hydrogen Treatment
- Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
- Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine
- Accurate Frequency Control of External-Cavity Laser Diode by Sideband Locking Technique
- Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
- Optical Head with Annular Phase-Shifting Apodizer
- Improved Electron Mobility of Two-Dimensional Electron Gas Formed Area-Selectively in GaAs/AlGaAs Heterostructure by Focused Si Ion Beam Implantation and MBE Overgrowth
- A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions