Preparation of Cu-O Films by Sputtering Using He Gas (<Special Issue> Plasma Processing)
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概要
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Cu-O films have been deposited by rf sputtering using a mixture of Ar, He and O_2 as a sputtering gas. When He was mixed with the sputtering gas, highly oxidized Cu-O films were obtained with low O_2 content of the sputtering gas, compared with those deposited without He. Activated particles in the plasma were investigated by optical emission spectroscopy analysis. This enhancement of oxidation of Cu-O films is related to an increase in O^+_2 and O^* generated through the Penning ionization process by He^m in neutral excited metastable states.
- 社団法人応用物理学会の論文
- 1994-07-30
著者
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Fujii Toshio
Fujitsu Laboratories Lid.
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Fujii Toshio
Fujitsu Laboratories Limited
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Fujii T
Central Research Institute Of Electric Power Industry
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KOYANAGI Tsuyoshi
Department of Electronics
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MATSUBARA Kakuei
Department of Electronics
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Matsubara Kakuei
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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FUJII Takamichi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University
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MOROFUJI Kouji
Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University
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KASHIMA Tetsuya
Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University
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Koyanagi T
Yamaguchi Univ. Ube Jpn
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Koyanagi Tsuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Morofuji Kouji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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KASHIMA Toshihiro
Research Institute, Toyobo Co., Ltd.
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Kashima T
Research Institute Toyobo Co. Ltd.
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