Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams
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概要
- 論文の詳細を見る
Si epitaxial films on Si (111) substrates could be obtained by ionized-cluster-beam deposition at the low substrate temperatures of 300°-730℃ in a vacuum range of 10^<-7>-10^<-6> Torr. The crystalline and electrical characteristics of Si epitaxial films were measured through use of the medium-energy ion channeling and backscattering, the Hall effect, and C- V measurements. The results show that epitaxial films of about the same quality as the substrate could be grown. The p-n junction diodes formed by the deposition of n-type Si on p-type Si substrates at low substrate temperatures had sharp junctions.
- 社団法人応用物理学会の論文
- 1980-04-05
著者
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Takagi Toshinori
Department Of Electronics Kyoto University
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Matsubara Kakuei
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Matsubara Kakuei
Department Of Electronics Kyoto University
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TAKAOKA Hiroshi
Department of Electronics, Kyoto University
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Ishiyama Satoshi
Department Of Electronics Kyoto University
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Takaoka Hiroshi
Department Of Electronics Kyoto University
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YAMADA Isao
FOM-Instituut voor Atoom-en Molecuulfysica
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SARIS Frans
FOM-Instituut voor Atoom-en Molecuulfysica
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Yamada Isao
Fom-instituut Voor Atoom-en Molecuulfysica:(present Address)ion Beam Engineering Experimental Labora
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