Preparation of Cu-O Films by Electron Cyclotron Resonance Plasma-Assisted Sputtering
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概要
- 論文の詳細を見る
Preparation of Cu-O films has been performed by using electron cyclotron resonance (ECR) plasma-assisted sputtering, and the effects of activated species in the ECR plasma on the properties of Cu-O films have been investigated from measurements of the optical emission spectroscopy. The emission intensities from O_2^+ molecular ions and O^* atomic radicals in the ECR oxygen plasma increase monotonously with increasing microwave power of the ECR plasma source. The oxygen content of Cu-O films can be successfully controlled by changing the microwave power of the ECR plasma source. These results suggest that the role of the activated species of oxygen is important in oxidization of Cu atoms.
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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Fujii Toshio
Fujitsu Laboratories Lid.
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KOYANAGI Tsuyoshi
Department of Electronics
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MATSUBARA Kakuei
Department of Electronics
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Matsubara Kakuei
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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FUJII Takamichi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University
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ANNO Toshihiko
Ube Laboratory, Ube Industries Ltd.
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HIRAI Hidetoshi
Department of Electrical and Electronic Engineering, Yamaguchi University
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Koyanagi T
Yamaguchi Univ. Ube Jpn
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Koyanagi Tsuyoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Anno Toshihiko
Ube Laboratory Ube Industries Ltd.
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Hirai H
Tokyo Inst. Technology Yokohama
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