Accurate Frequency Control of External-Cavity Laser Diode by Sideband Locking Technique

スポンサーリンク

概要

• 論文の詳細を見る

• We developed a new, simple laser diode (LD) system in which the laser frequency can be tuned continuously and stabilized at a desired value. The frequency of the 780 nm LD which had no additional antireflection coating on the output facet was varied continuously over a range of 22 GHz by scanning the grating angle and the drive current simultaneously. The LD frequency was offset locked by locking of the frequency of one of the sidebands to a Fabry-Perot interferometer which was locked to a frequency-stabilized He-Ne laser. The sidebands were generated by passing the laser beam through a traveling-wave EO-modulator. By varying the modulation frequency of the EO-modulator, the laser frequency was varied smoothly in a range of 200 MHz, and was stabilized at a frequency which differed by 500 MHz from the resonance frequency of the Fabry-Perot interferometer.

• 社団法人応用物理学会の論文
• 1996-12-15

著者

• Ohtsu Motoichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Fujii Toru

  General R&d Lab. Taiyo Yuden Co. Ltd.

• NAYUKI Takuya

  Central Research Institute of Electric Power Industry

• FUJII Takashi

  Central Research Institute of Electric Power Industry

• Fujii T

  Toyohashi Univ. Technol. Toyohashi Jpn

• KOUROGI Motonobu

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Fujii Toshio

  Fujitsu Laboratories Limited

• Fujii T

  Central Research Institute Of Electric Power Industry

• Ohtsu M

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Ohtsu Motoichi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• NAYUKI Takuya

  Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Pow

• FUJII Takashi

  Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Pow

• KOZUMA Mikio

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• OHTSU Motoichi

  The University of Tokyo

• Kourogi M

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology:japan Sci

• Nemoto K

  Central Research Institute Of Electric Power Industry

• Nemoto Koshichi

  Electric Power Engineering Research Laboratory Central Research Institute Of Electric Power Industry

• Fujii Takashi

  Exploratory Research Laboratories Fujisawa Pharmaceutical Co. Ltd.

• Kourogi Motonobu

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology:optical C

• Fujii Takashi

  Electrical Engineering Faculty Of Science Of Sage University

• Ohtsu Motoichi

  Department of Electrical Engineering and Information Systems, The University of Tokyo

関連論文

• Pyrazoline Dimers for Hole Transport Materials in Organic Electroluminescent Devices
• Novel Europium Complex for Electroluminescent Devices with Sharp Red Emission
• Organic Electroluminescent Devices with 8-Hydroxyquinoline Derivative-Metal Complexes as an Emitter
• Blue Electroluminescence in Thin Films of Azomethin-Zinc Complexes
• Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
• The Novel Gluconeogenesis Inhibitors FR225659 and Related Compounds that Originate from Helicomyces sp. No. 19353 : II. Biological Profiles
• AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
• Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
• A Novel Technique for Monitoring the Reproducibility of Laser Tape-Target Interactions Using an X-ray Pinhole Camera
• The Novel Gluconeogenesis Inhibitors FR225659 and Related Compounds that Originate from Helicomyces sp. No.19353 : I. Taxonomy, Fermentation, Isolation and Physico-chemical Properties
• FR235222, a Fungal Metabolite, is a Novel Immunosuppressant that Inhibits Mammalian Histone Deacetylase (HDAC) II. Biological Activities in Animal Models
• FR235222, a Fungal Metabolite, is a Novel Immunosuppressant that Inhibits Mammalian Histone Deacetylase (HDAC) I. Taxonomy, Fermentation, Isolation and Biological Activities
• FR252921, a Novel Immunosuppressive Agent Isolated from Pseudomonas fluorescens No.408813 II. In Vitro Property and Mode of Action
• Proton-induced Nuclear Reactions Using Compact High-Contrast High-Intensity Laser
• Lateral Integration of Zn and Al Dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe(Special Issue on Near-Field Optics and Its Applications)
• Fabrication of an Ultraviolet Light-Emitting Functional Probe of Sub-Micron Size by Photochemical Vapor Deposition
• High Luminance in Organic Electroluminescent Devices with Bis(10-hydroxybenzo[h]quinolinato)beryllium as an Emitter
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
• Observation of Size-Dependent Resonance of Near-Field Coupling between a Deposited Zn Dot and the Probe Apex during Near-Field Optical Chemical Vapor Deposition(Nanophotonics and Related Techniques)
• High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
• Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
• Gas Source Molecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source
• Si_2H_6 Doping of InP in Gas-Source Molecular Beam Epitaxy Using Triethylindium and Phosphine
• Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
• Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
• A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• Multirefiection of Cold Atoms in a Near-Field Optical Funnel
• High Efficiency Exitation of Cylindrical Optical Near Fields for Atom Guidance
• Fluorescence Spectroscopy of Rb Atoms with Two-Color Optical Near Fields for a High-Resolution Slit-Type Detector(Special Issue on Near-Field Optics and Its Applications)
• High Spatial Resolution Atom Detector with Two-Color Optical Near Fields
• Dependence of Proton Source Size on Proton Energy Accelerated by Ultrashort Laser Pulse
• Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
• High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam Epitaxy
• Nanophotonic Matching by Optical Near-Fields between Shape-Engineered Nanostructures
• Phase-Sensitive Optical Probe for Surface Acoustic Wave Soliton Investigation
• Experimental Studies on Nonlinear Dispersive Surface Acoustic Waves for Solitons
• Reconstruction of Three-Dimensional Images of Surface Acoustic Waves by Means of Computer-Controlled Laser Probe
• Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
• New Aspects in Nanofabrication Using Near-Field Photo-Chemical Vapor Deposition
• Initial growth process of a Zn nanodot fabricated using nonadiabatic near-field optical CVD
• Observation of Faraday Rotation and Magnetic Circular Dichroism in an Optical Near-Field Probe Coated with Fe(Nanophotonics and Related Techniques)
• Anti-Parallel Dipole Coupling of Quantum Dots via an Optical Near-Field Interaction(Nanophotonics and Related Techniques)
• Nanophotonic Devices and Fundamental Functional Operations(Nanophotonics and Related Techniques)
• Nanophotonic Computing Based on Optical Near-Field Interactions between Quantum Dots(Nanophotonics and Related Techniques)
• Superradiance and Dipole Ordering of an N Two-Level System Interacting with Optical Near Fields
• Superradiance and Dipole Ordering of an N Two-Level System Interacting with Optical Near Fields
• Preparation and Electrical Properties of Rhombohedral Pb(Zr_xTi_)O_3 Thin Films by RF Magnetron Sputtering Method
• Magnetic, Optical and Microwave Properties of Rare-Earth-Substituted Fibrous Yttrium Iron Garnet Single Crystals Grown by Floating Zone Method
• Growth and Optical Properties of Ce-Substituted Fibrous YIG Single Crystals
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Electric Field Effect in Al/SrTiO_3/YBa_2Cu_3O_y Structure in the Normal State
• Dielectric Properties of SrTiO_3 Epitaxial Film and Their Application to Measurement of Work Function of YBa_2Cu_3O_y Epitaxial Film
• Analysis on Electric Field Effect in Al/SrTiO_3/YBa_2Cu_3O_y Structure
• Metal-Insulator-Superconductor Field-Effect-Transistor Using SrTiO_3/YBa_2Cu_3O_y Heteroepitaxial Films
• Epitaxial SrTiO_3 Thin Films Grown by ArF Excimer Laser Deposition
• Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
• 1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors
• Ten-Year Overview and Future Prospects of Write-Once Organic Recordable Media
• Approach for High Speed Recording of 4.7GB Digital Versatile Disc-Recordable
• Growth of K_3Li_Nb_O_ Single-Crystal Fibers
• Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
• Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
• Simulation of Mode Selectability Characteristics by Phase Constraint in a Bare Coordinate-Transforming Cavity
• Continuous Wavelength Sweep of External Cavity 630 nm Laser Diode without Antireflection Coating on Output Facet
• Coordinate-Transformed and Self-Reproducible Complex Amplitudes Inside Laser Cavities
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Electroless Nickel Plating under Continuous Ultrasonic Irradiation to Fabricate a Near-Field Probe Whose Metal Coat Decreases in Thickness toward the Tip
• Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
• Fabrication of a Ferromagnetic-Coated Fiber Probe with a Double-Layer Structure(Special Issue on Near-Field Optics and Its Applications)
• Optical and Structural Properties of ZnO Nanorods Grown on Polyimide Films
• Preparation of Polycrystalline Bismuth and Aluminum Substituted Yttrium-Iron Garnet Films by Repetitive Gel Coating on Glass Substrates
• Characterization of Maghemite Thin Films Prepared by Spin-Coating a Gel Solution
• High Density Optical Recording on Dye Material Discs: An Approach for Achieving 4.7 GB Density
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
• Evaluation of Yields of $\gamma$-Rays Produced by Electrons from Gas Jets Irradiated by Low-Energy Laser Pulses: Towards ``Virtual Radioisotopes''
• Preparation of Cu-O Films by Sputtering Using He Gas ( Plasma Processing)
• Preparation of Cu-O Films by Electron Cyclotron Resonance Plasma-Assisted Sputtering
• Relation between Ge(2) Center and 11.9 mT Hyperfine Structure of ESR Spectra in Ge-Doped Silica Fibers : Magnetism, Magnetic Materials and Devices
• The 1.52μm Absorption Band in Optical Fibers Induced by Hydrogen Treatment
• An X-ray Imaging System for Hard-to-Reach Facility Diagnosis Using Femtosecond Laser-Plasma
• Vacuum Shear Force Microscopy Application to High Resolution Work
• Accurate Frequency Control of External-Cavity Laser Diode by Sideband Locking Technique
• Nanometric Scale Biosample Observation Using a Photon Scanning Tunneling Microscope
• Scale-dependent Optical Near-fields in InAs Quantum Dots and Their Application to Non-pixelated Memory Retrieval
• Magnetic Properties of Sodium-Modified Iron-Oxide Powders Synthesized by Sol-Gel Method
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Reproducible Fabrication Technique of Nanometric Tip Diameter Fiber Probe for Photon Scanning Tunneling Microscope
• Complementary Characterization of Radioactivity Produced by Repetitive Laser-Driven Proton Beam Using Shot-to-Shot Proton Spectral Measurement and Direct Activation Measurement
• Dependence of Proton Source Size on Proton Energy Accelerated by Ultrashort Laser Pulse

もっと見る 閉じる

スポンサーリンク