Si_2H_6 Doping of InP in Gas-Source Molecular Beam Epitaxy Using Triethylindium and Phosphine
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-10-01
著者
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FUJII Toshio
Fujitsu Laboratories Ltd.
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サンドゥー アダルシュ
東工大
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Sandhu A
Fujitsu Laboratories Ltd.
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Sandhu Adarsh
Fujitsu Laboratories Limited
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ANDO Hideyasu
Fujitsu Laboratories Ltd.
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OKAMOTO Naoya
Fujitsu Laboratories Ltd.
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Fujii Toshio
Fujitsu Laboratories Lid.
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Fujii Toshio
Fujitsu Laboratories Limited
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Ando H
Toshiba Corp. Kawasaki Jpn
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Okamoto N
Fujitsu Lab. Ltd. Atsugi Jpn
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