Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-06-15

著者

• 末益 崇

  筑波大学大学院数理物質科学研究科電子・物理工学専攻

• Fujii Toru

  General R&d Lab. Taiyo Yuden Co. Ltd.

• FUJII Takashi

  Central Research Institute of Electric Power Industry

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Fujii T

  Toyohashi Univ. Technol. Toyohashi Jpn

• HIROI Noriyoshi

  Institute of Applied Physics, University of Tsukuba

• Fujii Tetsuo

  Institute of Applied Physics, University of Tsukuba

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Fujii Toshio

  Fujitsu Laboratories Limited

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Fujii T

  Central Research Institute Of Electric Power Industry

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• IIKURA Yusuke

  Institute of Applied Physics, University of Tsukuba

• Hiroi Noriyoshi

  Institute Of Applied Physics University Of Tsukuba

• Iikura Yusuke

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Takakura K

  Institute Of Applied Physics University Of Tsukuba

• Fujii Takashi

  Exploratory Research Laboratories Fujisawa Pharmaceutical Co. Ltd.

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

関連論文

• 結晶成長技術
• Si 結晶中に埋め込まれた FeSi_2 のTEM観察
• CS-12-8 シリコンナノフォトニクスへの期待(CS-12. 次世代ナノ技術と情報通信, エレクトロニクス2)
• 5p-YK-5 Fe-Si系化合物の作製と評価(III)
• Negative Ion Assisted Silicon Oxidation in Downstream of Microwave Plasma
• Traveling Liquidus-Zone (TLZ) 法により成長するバルクInGaAsの単結晶化初期状態の観察
• Traveling Liquidus-Zone 法で成長するバルクInGaAsの単結晶化メカニズムの検討
• 23aTL-4 環境半導体 β-FeSi_2 の電子構造の圧力効果
• The Novel Gluconeogenesis Inhibitors FR225659 and Related Compounds that Originate from Helicomyces sp. No. 19353 : II. Biological Profiles
• Enhancement of Negative-Ion-Assisted Silicon Oxidation by Radio-Frequency Bias
• A Novel Technique for Monitoring the Reproducibility of Laser Tape-Target Interactions Using an X-ray Pinhole Camera
• Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
• The Novel Gluconeogenesis Inhibitors FR225659 and Related Compounds that Originate from Helicomyces sp. No.19353 : I. Taxonomy, Fermentation, Isolation and Physico-chemical Properties
• FR235222, a Fungal Metabolite, is a Novel Immunosuppressant that Inhibits Mammalian Histone Deacetylase (HDAC) II. Biological Activities in Animal Models
• FR235222, a Fungal Metabolite, is a Novel Immunosuppressant that Inhibits Mammalian Histone Deacetylase (HDAC) I. Taxonomy, Fermentation, Isolation and Biological Activities
• FR252921, a Novel Immunosuppressive Agent Isolated from Pseudomonas fluorescens No.408813 II. In Vitro Property and Mode of Action
• Proton-induced Nuclear Reactions Using Compact High-Contrast High-Intensity Laser
• Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
• 多元系シリサイドの新展開 : 半導体BaSi_2を例に
• Band Diagrams of BaSi_2/Si Structure by Kelvin Probe and Current-Voltage Characteristics
• Optical Absorption Edge of Ternary Semiconducting Silicide Ba_Sr_xSi_2
• Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
• Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
• Epitaxial Growth of Semiconducting BaSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
• 環境に優しい光半導体 : β-FeSi_2の現状と将来展望
• 鉄シリサイド光デバイスの最前線 (特集 機能に富んだ材料シリコン)
• Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
• Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
• Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
• 環境にやさしい直接遷移型半導体β-FeSi_2の研究の現状と将来展望
• Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
• 分子線エピタキシー法によるβ-FeSi_2球のSi中埋込み構造作製と高温アニールによる赤外フォトルミネッセンスの増大
• 熱反応堆積法を利用した赤外発光β-FeSi2球及び高移動度β-FeSi2膜の作製:高温アニールによる特性改善 (〈特集〉環境半導体)
• Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
• On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
• Stability of Si(111)√×√R30°-B Surface in Air
• Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
• Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
• Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
• Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
• Formation of β-FeSi_2 Layers on Si(001) Substrates
• Dependence of Proton Source Size on Proton Energy Accelerated by Ultrashort Laser Pulse
• Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
• Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
• Preparation and Electrical Properties of Rhombohedral Pb(Zr_xTi_)O_3 Thin Films by RF Magnetron Sputtering Method
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
• Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Magnetic, Optical and Microwave Properties of Rare-Earth-Substituted Fibrous Yttrium Iron Garnet Single Crystals Grown by Floating Zone Method
• Growth and Optical Properties of Ce-Substituted Fibrous YIG Single Crystals
• Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
• Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
• One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
• Low Carbon Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs Using Dimethylamine Gallane
• Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamimo-Arsine and Trimethylgallium
• Ten-Year Overview and Future Prospects of Write-Once Organic Recordable Media
• Approach for High Speed Recording of 4.7GB Digital Versatile Disc-Recordable
• Growth of K_3Li_Nb_O_ Single-Crystal Fibers
• Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
• Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
• Simulation of Mode Selectability Characteristics by Phase Constraint in a Bare Coordinate-Transforming Cavity
• Continuous Wavelength Sweep of External Cavity 630 nm Laser Diode without Antireflection Coating on Output Facet
• Coordinate-Transformed and Self-Reproducible Complex Amplitudes Inside Laser Cavities
• Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
• Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
• Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
• Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
• Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy
• Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
• Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
• Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
• Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
• Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
• Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
• Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
• Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
• Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
• Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
• Passivation Properties of Plasma CVD AlN Films for GaAs
• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• High Density Optical Recording on Dye Material Discs: An Approach for Achieving 4.7 GB Density
• Evaluation of Yields of $\gamma$-Rays Produced by Electrons from Gas Jets Irradiated by Low-Energy Laser Pulses: Towards ``Virtual Radioisotopes''
• CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy
• Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
• Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
• Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
• Accurate Frequency Control of External-Cavity Laser Diode by Sideband Locking Technique
• Complementary Characterization of Radioactivity Produced by Repetitive Laser-Driven Proton Beam Using Shot-to-Shot Proton Spectral Measurement and Direct Activation Measurement
• Dependence of Proton Source Size on Proton Energy Accelerated by Ultrashort Laser Pulse

もっと見る 閉じる

スポンサーリンク