HIROI Noriyoshi | Institute of Applied Physics, University of Tsukuba

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概要

• 同名の論文著者
• Institute of Applied Physics, University of Tsukubaの論文著者

関連著者

• 末益 崇

  筑波大学大学院数理物質科学研究科電子・物理工学専攻

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• HIROI Noriyoshi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Hiroi Noriyoshi

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Takakura K

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• Fujii Toru

  General R&d Lab. Taiyo Yuden Co. Ltd.

• FUJII Takashi

  Central Research Institute of Electric Power Industry

• Fujii T

  Toyohashi Univ. Technol. Toyohashi Jpn

• Fujii Tetsuo

  Institute of Applied Physics, University of Tsukuba

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Fujii Toshio

  Fujitsu Laboratories Limited

• Fujii T

  Central Research Institute Of Electric Power Industry

• Fujii Takashi

  Exploratory Research Laboratories Fujisawa Pharmaceutical Co. Ltd.

• Seki Naoki

  Institute Of Applied Physics University Of Tsukuba

• TAKAKURA Ken-ichiro

  Institute of Applied Physics, University of Tsukuba

• IIKURA Yusuke

  Institute of Applied Physics, University of Tsukuba

• Iikura Yusuke

  Institute Of Applied Physics University Of Tsukuba

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著作論文

• Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
• Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
• Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
• Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing

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