Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
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概要
- 論文の詳細を見る
In order to characterize the Cr (Chromium)-level in bulk GaAs, a normal DLTS method was applied to boat-grown bulk GaAs which was Cr- and O (Oxygen)-doped but did not become semi-insulating. In the lightly-compensated region, no Cr signal was observed, probably because it is covered by the signal from the main electron trap EL2. In the moderately-compensated region, both signals of Cr and El2 were observed, but the trap concentration of EL2 was greatly reduced. In the heavily-compensated region, a large Cr-trap signal was observed, but no signal ofEL2 could be observed even when the minority carrier injection was suppressed. Since Cr occupies a Ga site and forms deep acceptors, these results can be understood by considering that the Cr doping reduces the number of Ga vacancies and as a result the number of main electron traps EL2 which are produced by a Ga deficit is also reduced.
- 社団法人応用物理学会の論文
- 1982-10-20
著者
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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HASEGAWA Fumio
Tohoku University of Art and Design
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Iwata Naotaka
Institute Of Material Science University Of Tsukuba:(present Address)basic Research Laboratory Nippo
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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